Work

A study of Ge/GaAs interfaces grown by molecular beam epitaxy

Year: 1981

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.329254

Authors: R. A. Stall, C. E. C. Wood, K. Board, N. Dandekar, L. F. Eastman, J. Devlin

Institution: Cornell University

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1997296121

FWCI: 3.159

Cites: 18

Cited by: 67

Related to: 10