Author

Hi-Choon Lee

Institution: Samsung Electronics (South Korea)

Observed institution: Samsung Electronics (South Korea)

OpenAlex ID: A5111904078

A 1.8-V 700-mb/s/pin 512-mb DDR-II SDRAM with on-die termination and off-chip driver calibration

2004 · Changsik Yoo, Kye-Hyun Kyung, et al. · IEEE Journal of Solid-State Circuits · 35

A 2.5-V 2.0-Gbyte/s 288-Mb packet-based DRAM with enhanced cell efficiency and noise immunity

2001 · Kye-Hyun Kyung, Hi-Choon Lee, et al. · IEEE Journal of Solid-State Circuits · 2

Works count: 2

Citation count: 37

H-index: 2

I10-index: 1