A 1.8-V 700-mb/s/pin 512-mb DDR-II SDRAM with on-die termination and off-chip driver calibration
Year: 2004
Type: article
Authors: Changsik Yoo, Kye-Hyun Kyung, Kyunam Lim, Hi-Choon Lee, Joon-Wan Chai, Nak-Won Heo, Dong-Jin Lee, Chang-Hyun Kim
Institutions: Hanyang University, Samsung Electronics (South Korea)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2115809483