Author

Tom C. Hasenberg

Observed names: T. C. Hasenberg, T. Hasenberg, T.C. Hasenberg, T.C. Hasenberg,, Thomas Hasenberg, Tom Hasenberg

Observed institutions: University of Southern California, University of Iowa, University of Arizona, HRL Laboratories (United States), Boston Scientific (United States), American Med Systems (United States), JDSU (United States), Coherent (United States)

OpenAlex ID: A5111934866

Mid-wave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlattices

1995 · D. H. Chow, R. H. Miles, et al. · Applied Physics Letters · 92

Carrier recombination rates in narrow-gap InAs/Ga1−xInxSb -based superlattices

1999 · Michael E. Flatté, C. H. Grein, et al. · Physical review. B, Condensed matter · 71

Recent advances in Sb-based midwave-infrared lasers

1997 · T.C. Hasenberg, R.H. Miles, et al. · IEEE Journal of Quantum Electronics · 71

Ion-induced topography, depth resolution, and ion yield during secondary ion mass spectrometry depth profiling of a GaAs/AlGaAs superlattice: Effects of sample rotation

1991 · Eun-Hee Cirlin, John J. Vajo, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 69

Demonstration of 3.5 µm Ga 1- x In x Sb/InAssuperlattice diodelaser

1995 · T.C. Hasenberg, D.H. Chow, et al. · Electronics Letters · 55

Temperature dependence of Auger recombination in a multilayer narrow-band-gap superlattice

1998 · D.-J. Jang, Michael E. Flatté, et al. · Physical review. B, Condensed matter · 49

III-V interband 5.2 μm laser operating at 185 K

1997 · Michael E. Flatté, T. C. Hasenberg, et al. · Applied Physics Letters · 43

Theoretical performance of mid-infrared broken-gap multilayer superlattice lasers

1997 · Michael E. Flatté, J. T. Olesberg, et al. · Applied Physics Letters · 42

High detectivity InGaAsSb pin infraredphotodetectorfor blood glucose sensing

2000 · B.L. Carter, E. Shaw, et al. · Electronics Letters · 41

Carrier recombination dynamics in a (GaInSb/InAs)/AlGaSb superlattice multiple quantum well

1996 · S. W. McCahon, S. A. Anson, et al. · Applied Physics Letters · 41

Interface contributions to spin relaxation in a short-period InAs/GaSb superlattice

2001 · J. T. Olesberg, Wayne H. Lau, et al. · Physical review. B, Condensed matter · 40

Differential gain, differential index, and linewidth enhancement factor for a 4 μm superlattice laser active layer

1999 · S. A. Anson, J. T. Olesberg, et al. · Journal of Applied Physics · 33

Hot carrier dynamics in a (GaInSb/InAs)/GaInAlAsSb superlattice multiple quantum well measured with mid-wave infrared, subpicosecond photoluminescence upconversion

1997 · D.-J. Jang, J. T. Olesberg, et al. · Applied Physics Letters · 25

Experimental and theoretical density-dependent absorption spectra in (GaInSb/InAs)/AlGaSb superlattice multiple quantum wells

1998 · J. T. Olesberg, S. A. Anson, et al. · Applied Physics Letters · 24

Limiting factors for secondary ion mass spectrometry profiling

1994 · Eun-Hee Cirlin, John J. Vajo, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 20

Room-temperature optical nonlinearities in strained (InAs)2(GaAs)5 superlattice quantum wells

1991 · D. S. McCallum, X. R. Huang, et al. · Journal of Applied Physics · 19

Optimization of active regions in midinfrared lasers

1999 · J. T. Olesberg, Michael E. Flatté, et al. · Applied Physics Letters · 18

Optical control of microwaves with semiconductor n-i-p-i structures

1993 · Alan Kost, Linda West, et al. · Applied Physics Letters · 17

InAs/antimonide-based resonant tunneling structures with ternary alloy layers

1994 · J.N. Schulman, D.H. Chow, et al. · Solid-State Electronics · 16

Combined local and carrier transport optical nonlinearities in a hetero n-i-p-i structure

1991 · Alan Kost, Michael Jupina, et al. · Applied Physics Letters · 16

Linear optical properties of quantum wells composed of all-binary InAs/GaAs short-period strained-layer superlattices

1991 · T. C. Hasenberg, D. S. McCallum, et al. · Applied Physics Letters · 16

Room-temperature short-period transient grating measurement of perpendicular transport in GaAs/AlGaAs multiple quantum wells

1991 · D. P. Norwood, H.-E. Swoboda, et al. · Applied Physics Letters · 15

Optical nonlinearities and ultrafast charge transport in all-binary InAs/GaAs strained hetero n-i-p-i’s

1991 · D. S. McCallum, X. R. Huang, et al. · Journal of Applied Physics · 14

Water content contribution in calculus phantom ablation during Q-switched Tm:YAG laser lithotripsy

2015 · Jian J. Zhang, Danop Rajabhandharaks, et al. · Journal of Biomedical Optics · 12

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Enhanced ambipolar in-plane transport in an InAs/GaAs hetero-n-i-p-i

1993 · D. S. McCallum, A. N. Cartwright, et al. · Journal of Applied Physics · 12

Works count: 110

Citation count: 1,006

H-index: 17

I10-index: 27