Work

Carrier recombination rates in narrow-gap InAs/Ga1−xInxSb -based superlattices

Year: 1999

Type: article

Source: Physical review. B, Condensed matter

DOI: 10.1103/physrevb.59.5745

Authors: Michael E. Flatté, C. H. Grein, T. C. Hasenberg, S. A. Anson, D.-J. Jang, J. T. Olesberg, Thomas F. Boggess

Institutions: University of Iowa, University of Illinois Chicago

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W14995058

FWCI: 4.705

Cites: 24

Cited by: 71

Related to: 10