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Sadayoshi Horii
Observed names:
S Horii,
S. Horii,
Sadayoshi Horii Sadayoshi Horii
Institutions:
KOKUSAI ELECTRIC Corporation (Japan),
Hitachi (Japan)
Observed institutions:
Japan Advanced Institute of Science and Technology,
IMEC,
KOKUSAI ELECTRIC Corporation (Japan),
Hitachi (Japan)
OpenAlex ID:
A5111965050
Electrical and physical properties of HfO2 films prepared by remote plasma oxidation of Hf metal
2003
·
Kazuhiko Yamamoto
, Shigenori Hayashi
, et al.
·
Applied Physics Letters
·
68
Material Properties of Heteroepitaxial Ir and Pb(ZrxTi1-x)O3 Films on (100)(ZrO2)1-x(Y2O3)x/(100)Si Structure Prepared by Sputtering
1998
·
Susumu Horita
, Sadayoshi Horii
, et al.
·
Japanese Journal of Applied Physics
·
29
PDF
Enhancing memory efficiency of Si nanocrystal floating gate memories with high-κ gate oxides
2006
·
Prakaipetch Punchaipetch
, Yukiharu Uraoka
, et al.
·
Applied Physics Letters
·
28
PDF
Thickness Dependence of Material Properties of Epitaxial Pb(ZrxTi1-x)O3 Films on Ir/(100) (ZrO2)1-x(Y2O3)x/(100)Si Structures
1999
·
Sadayoshi Horii Sadayoshi Horii
, Seiji Yokoyama Seiji Yokoyama
, et al.
·
Japanese Journal of Applied Physics
·
26
High deposition rate of epitaxial (100) Iridium film on (100)YSZ/(100)Si substrate by RF sputtering deposition
2002
·
Tran Dang Khoa
, Sadayoshi Horii
, et al.
·
Thin Solid Films
·
23
Metalorganic Chemical Vapor Deposition of HfO2Films through the Alternating Supply of Tetrakis(1-methoxy-2-methyl-2-propoxy)-Hafnium and Remote-Plasma Oxygen
2003
·
Sadayoshi Horii
, Kazuhiko Yamamoto
, et al.
·
Japanese Journal of Applied Physics
·
22
Effect of Nitrogen on Electrical and Physical Properties of Polyatomic Layer Chemical Vapor Deposition HfSixOyGate Dielectrics
2004
·
Prakaipetch Punchaipetch
, Takeshi Okamoto
, et al.
·
Japanese Journal of Applied Physics
·
14
Improving High-κ Gate Dielectric Properties by High-Pressure Water Vapor Annealing
2006
·
Prakaipetch Punchaipetch
, Makoto Miyashita
, et al.
·
Japanese Journal of Applied Physics
·
13
PDF
Impact of Hf Metal Predeposition on the Properties of HfO2Grown by Physical and Chemical Vapor Deposition
2003
·
Kazuhiko Yamamoto
, Shigenori Hayashi
, et al.
·
Japanese Journal of Applied Physics
·
13
PDF
Electrical and physical characterization of remote plasma oxidized HfO/sub 2/ gate dielectrics
2006
·
K. Yamamoto
, W. Deweerd
, et al.
·
IEEE Transactions on Electron Devices
·
8
Low Voltage Saturation of Pb(ZrxTi1-x)O3 Films on (100)Ir/(100)(ZrO2)1-x(Y2O3)x/(100)Si Substrate Structure Prepared by Reactive Sputtering
2000
·
Sadayoshi Horii Sadayoshi Horii
, Seiji Yokoyama Seiji Yokoyama
, et al.
·
Japanese Journal of Applied Physics
·
8
PDF
Scalability of TiN/HfAlO/TiN MIM DRAM capacitor to 0.7-nm-EOT and beyond
2009
·
N. Mise
, O. Tonomura
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
7
Theoretical Screening of Candidate Materials for DRAM Capacitors and Experimental Demonstration of a Cubic-Hafnia MIM Capacitor
2010
·
Nobuyuki Mise
, Arito Ogawa
, et al.
·
IEEE Transactions on Electron Devices
·
6
Metal-Organic Chemical Vapor Deposition of HfO2by Alternating Supply of Tetrakis-Diethylamino-Hafnium and Remote-Plasma Oxygen
2004
·
Sadayoshi Horii
, Kazuhiko Yamamoto
, et al.
·
Japanese Journal of Applied Physics
·
6
PDF
Growth and effects of remote-plasma oxidation on thin films of HfO2 prepared by metal-organic chemical-vapor deposition
2003
·
Kazuhiko Yamamoto
, Masayuki Asai
, et al.
·
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
·
6
HF and Hydrazine Monohydrate Solution Treatment for Suppressing Oxidation of ZrN Film Surface
2001
·
Sadayoshi Horii Sadayoshi Horii
, Takeo Toda Takeo Toda
, et al.
·
Japanese Journal of Applied Physics
·
6
PDF
Crystalline and ferroelectrical properties of heteroepitaxial (100) and (111) Pb(ZrxTi1−x)O3 films on Ir/(100)(ZrO2)1−x(Y2O3)x/(100)Si structures
2001
·
Susumu Horita
, Sadayoshi Horii
, et al.
·
Thin Solid Films
·
5
Impact of In situ Postnitridation Annealing for Successful Fabrication of HfSiON Thin Film
2007
·
Sadayoshi Horii
, Dai Ishikawa
, et al.
·
Japanese Journal of Applied Physics
·
4
Ferroelectric properties of epitaxial Bi4Ti3O12 films deposited on epitaxial (100) Ir and (100) Pt films on Si by sputtering
2002
·
S Horita
, S Sasaki
, et al.
·
Vacuum
·
4
Heteroepitaxial Growth of Ir/ZrN Layered Electrode on (100)Si Substrate for Ferroelectric Capacitor
1999
·
Sadayoshi Horii
, Seiji Yokoyama
, et al.
·
MRS Proceedings
·
4
Heteroepitaxial Growth of PZT Film on (100)Ir/(100)YSZ/(100)Si Substrate Structure Prepared by Reactive Sputtering
1998
·
Susumu Horita
, Sadayoshi Horii
·
MRS Proceedings
·
4
Hafnium Oxide Film Etching Using Hydrogen Chloride Gas
2009
·
Hitoshi Habuka
, Masahiko Yamaji
, et al.
·
Japanese Journal of Applied Physics
·
3
PDF
Improvement of Surface Crystalline Quality of an Epitaxial (100)ZrN Film as a Bottom Electrode Diffusion Barrier for Ferroelectric Capacitors
2001
·
Susumu Horita
, Sadayoshi Horii
, et al.
·
MRS Proceedings
·
3
Ni-FUSI on high-k as a candidate for 65nm LSTP CMOS
2005
·
S. Kubicek
, A. Veloso
, et al.
·
International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
·
2
Ferroelectric property of an epitaxial PZT/Ir/ZrN/Si structure by sputtering
2002
·
S. Horii
, S. Horita
·
IEEE International Symposium on Applications of Ferroelectrics (ISAF)
·
2
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Works count:
38
Citation count:
319
H-index:
9
I10-index:
9
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