Work

Scalability of TiN/HfAlO/TiN MIM DRAM capacitor to 0.7-nm-EOT and beyond

Year: 2009

Type: conference-paper

Source: Technical digest - International Electron Devices Meeting/Technical digest

DOI: 10.1109/iedm.2009.5424373

Authors: N. Mise, O. Tonomura, T. Sekiguchi, S. Horii, H. Itatani, A. Ogawa, T. Saito, M. Sakai, Y. Takebayashi, H. Yamazaki, K. Torii

Institutions: Hitachi (Japan), KOKUSAI ELECTRIC Corporation (Japan)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2136402222

FWCI: 2.394

Cites: 5

Cited by: 7

Related to: 10