Author

C. M. Osburn

Observed names: C. K. Osburn, C. M. OSBURN, C. Osburn, C.M Osburn, C.M. Osburn, Carlton M Osburn, Carlton M. OSBURN, Carlton M. Osburn, Carlton Osburn, OSBURN, CARLTON MORRIS

Observed institutions: University of North Carolina at Chapel Hill, IBM (United States), North Carolina State University, Duke University, RTI International, Purdue University West Lafayette, IBM Research - Thomas J. Watson Research Center, MCNC Research and Development Institute, Lawrence Semiconductor Research Laboratory, IBM Research - Austin

OpenAlex ID: A5111967734

Emission probability of hot electrons from silicon into silicon dioxide

1977 · T. H. Ning, C.M. Osburn, et al. · Journal of Applied Physics · 288

1 µm MOSFET VLSI technology: Part IV—Hot-electron design constraints

1979 · T.H. Ning, P.W. Cook, et al. · IEEE Transactions on Electron Devices · 248

Impact of gate workfunction on device performance at the 50 nm technology node

2000 · Indranil De, Deepak Johri, et al. · Solid-State Electronics · 190

Dielectric Breakdown in Silicon Dioxide Films on Silicon

1972 · C. M. Osburn, D. W. Ormond · Journal of The Electrochemical Society · 164

PDF

Electrical Conduction and Dielectric Breakdown in Silicon Dioxide Films on Silicon

1972 · C. M. Osburn, E. J. Weitzman · Journal of The Electrochemical Society · 142

Defect structure and electrical properties of NiO—I. High temperature

1971 · C.M. Osburn, R.W. Vest · Journal of Physics and Chemistry of Solids · 126

Optimization of the germanium preamorphization conditions for shallow-junction formation

1988 · M.C. Ozturk, J.J. Wortman, et al. · IEEE Transactions on Electron Devices · 117

Dielectric Breakdown in Silicon Dioxide Films on Silicon

1972 · C. M. Osburn, D. W. Ormond · Journal of The Electrochemical Society · 106

PDF

Defect annihilation in shallow p+ junctions using titanium silicide

1987 · D. S. Wen, P. L. Smith, et al. · Applied Physics Letters · 104

Effect of electron trapping on IGFET characteristics

1977 · T. H. Ning, C. M. Osburn, et al. · Journal of Electronic Materials · 96

Analysis of the effects of scaling on interconnect delay in ULSI circuits

1993 · S. Bothra, B. Rogers, et al. · IEEE Transactions on Electron Devices · 82

Formation of silicided, ultra-shallow junctions using low thermal budget processing

1990 · C. M. Osburn · Journal of Electronic Materials · 71

Defect structure and electrical properties of Nio—II. Temperatures below equilibration

1971 · C.M. Osburn, R.W. Vest · Journal of Physics and Chemistry of Solids · 67

Incorporation of metal silicides and refractory metals in VLSI technology

1991 · C.M. Osburn, Q.F. Wang, et al. · Applied Surface Science · 66

Dielectric Breakdown Properties of SiO2 Films Grown in Halogen and Hydrogen‐Containing Environments

1974 · C. K. Osburn · Journal of The Electrochemical Society · 64

PDF

Ultra-shallow junction formation using silicide as a diffusion source and low thermal budget

1992 · Q. Wang, C.M. Osburn, et al. · IEEE Transactions on Electron Devices · 60

Low parasitic resistance contacts for scaled ULSI devices

1998 · C.M Osburn, K.R Bellur · Thin Solid Films · 59

The Effect of Mobile Sodium Ions on Field Enhancement Dielectric Breakdown in SiO[sub 2] Films on Silicon

1973 · C. M. Osburn, S. I. Raider · Journal of The Electrochemical Society · 59

PDF

Electron trapping at positively charged centers in SiO2

1975 · T. H. Ning, C. M. Osburn, et al. · Applied Physics Letters · 56

Electrical Properties of Single Crystals, Bicrystals, and Polycrystals of MgO

1971 · C. M. OSBURN, R. W. VEST · Journal of the American Ceramic Society · 56

Agglomeration of Cobalt Silicide Films

1990 · Z. G. Xiao, G. A. Rozgonyi, et al. · MRS Proceedings · 52

Ultra Shallow Junction Formation Using Diffusion from Silicides: I . Silicide Formation, Dopant Implantation and Depth Profiling

1992 · H. Jiang, C. M. Osburn, et al. · Journal of The Electrochemical Society · 51

PDF

Impact of super-steep-retrograde channel doping profiles on the performance of scaled devices

1999 · I. De, C.M. Osburn · IEEE Transactions on Electron Devices · 49

Fabrication of a miniature 8K-bit memory chip using electron-beam exposure

1975 · H. N. Yu, R. H. Dennard, et al. · Journal of Vacuum Science and Technology · 49

Properties of SiO2 Grown in the Presence of HCl or Cl2

1975 · Y. J. van der Meulen, C. M. Osburn, et al. · Journal of The Electrochemical Society · 48

PDF

Works count: 158

Citation count: 3,836

H-index: 36

I10-index: 72