Work

Defect annihilation in shallow p+ junctions using titanium silicide

Year: 1987

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.98726

Authors: D. S. Wen, P. L. Smith, C. M. Osburn, G. A. Rozgonyi

Institutions: North Carolina State University, MCNC Research and Development Institute

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2017508456

FWCI: 8.463

Cites: 7

Cited by: 104

Related to: 10