Author

N. L. Ivina

Observed names: N. L. IVINA, N.L. Ivina, Natalia L. Ivina, Natal’ya L. Ivina, Ивина, Н.Л., Н. Л. Ивина, Н.Л. Ивина

Institution: Nizhny Novgorod State Conservatory named after M.I. Glinka

Observed institutions: Russian Academy of Sciences, The Russian Presidential Academy of National Economy and Public Administration, Nizhny Novgorod State Conservatory named after M.I. Glinka, Nizhny Novgorod Institute of Management and Business, Nizhny Novgorod State Technical University, Institute for Physics of Microstructures, N. I. Lobachevsky State University of Nizhny Novgorod

OpenAlex ID: A5111969905

Structure and ultraviolet photoluminescence of 3C-SiC films grown on Si(111)

2009 · L. K. Orlov, Yu. N. Drozdov, et al. · Physics of the Solid State · 9

Specificity of mono- and disilane decomposition at silicon surface under conditions of epitaxial growth

2013 · L. K. Orlov, N. L. Ivina, et al. · Russian Journal of General Chemistry · 7

Features and mechanisms of growth of cubic silicon carbide films on silicon

2012 · L. K. Orlov, E. A. Steinman, et al. · Physics of the Solid State · 7

Elastic stress relaxation in buffer layers based on porous strained InGaAs/GaAs superlattices

2002 · L. K. Orlov, N. L. Ivina, et al. · Technical Physics Letters · 7

Specific features and mechanisms of photoluminescence of nanostructured silicon carbide films grown on silicon in vacuum

2011 · L. K. Orlov, E. A. Shteinman, et al. · Physics of the Solid State · 5

Effect of crystal defects on the electrical behaviour of InP and SiGe epitaxial structures

2004 · Zs. J. Horváth, L. K. Orlov, et al. · The European Physical Journal Applied Physics · 5

InGaAs/GaAs porous superlattice as new material for quantum electronics

2003 · L. K. Orlov, N. L. Ivina, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 5

Comparative Analysis of Light Emitting Properties of Si: Er and Ge/Si1-xGex Epitaxial Structures Obtained by MBE Method

1999 · L.K. Orlov, A.V. Potapov, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 5

Structure and electronic properties of the 3C-SiC/SiGeC/Si(100) heterojunction formed by the vacuum chemical epitaxy method

2014 · L. K. Orlov, V. I. Vdovin, et al. · Journal of Structural Chemistry · 4

Anomalous electrical properties of Si/Si1 − x Ge x heterostructures with an electron transport channel in Si layers

2008 · L. K. Orlov, Z. J. Horvath, et al. · Physics of the Solid State · 4

Investigation of barrier tunneling characteristics of symmetrical double quantum well in In0.25Ga0.75As/GaAs/In0.25Ga0.75As heterostructure

2000 · L. K. Orlov, N. L. Ivina, et al. · Physics of the Solid State · 4

Low Temperature Growth of the Nanotextured Island and Solid 3C-SiC Layers on Si from Hydric Si, Ge and C Compounds

2020 · Lev K. Orlov, Vladimir I. Vdovin, et al. · Crystals · 3

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Microcrystalline Structure and Light-Emitting Properties of 3C–SiC Island Films Grown on the Si(100) Surface

2019 · L. K. Orlov, V. I. Vdovin, et al. · Physics of the Solid State · 3

Features of the two-component decomposition of monosilane molecules on a silicon surface under epitaxial-process conditions

2014 · N. L. Ivina, L. K. Orlov · Semiconductors · 3

Kinetics of the decomposition of disilane molecules on a silicon growth surface in vacuum chemical epitaxy

2013 · N. L. Ivina, T. N. Smyslova · Russian Journal of Physical Chemistry B · 3

Evaluation of compositional intermixing at interfaces in Si(Ge)/Si1−x Gex heteroepitaxial structures grown by molecular beam epitaxy with combined sources of Si and GeH4

2000 · L. K. Orlov, N. L. Ivina, et al. · Semiconductors · 3

Features of the Initial Stage of the Heteroepitaxy of Silicon Layers on Germanium When Grown from Silicon Hydrides

2019 · L. K. Orlov, N. L. Ivina, et al. · Semiconductors · 2

Electric-Field Behavior of the Resonance Features of the Tunneling Photocurrent Component in InAs(QD)/GaAs Heterostructures

2018 · M. L. Orlov, N. S. Volkova, et al. · Semiconductors · 2

Features of electronic transport in relaxed Si/Si1−XGeX heterostructures with high doping level

2013 · L.K. Orlov, A.A.Mel’ nikova, et al. · Physica E Low-dimensional Systems and Nanostructures · 2

Kinetics of hydride disintegration in a 2D Si channel formation by the Si–GeH4 MBE and demonstration of a Si/SiGe interface blurring in electrical characteristics of heterostructures

2005 · L.K. Orlov, N.L. Ivina, et al. · Microelectronics Journal · 2

Correlations between the surface morphology and electronic properties of porous multilayer structures with quantum InGaAs layers

2005 · N.L. Ivina, L.K. Orlov, et al. · Microelectronics Journal · 2

Physical properties of two dimensional nets of quantum InGaAs wires

2004 · L. K. Orlov, N. L. Ivina, et al. · The European Physical Journal Applied Physics · 2

Formation of a system of InGaAs quantum wires in a gallium arsenide matrix

2004 · L. K. Orlov, N. L. Ivina · Physics of the Solid State · 2

Multilayer strained Si-SiGe structures: fabrication problems, interface characteristics, and physical properties

2003 · L. K. Orlov, Zsolt J. Horvath, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2

Self-formation of quantum wire networks in porous InGaAs/GaAs superlattices

2002 · L. K. Orlov, N. L. Ivina · Journal of Experimental and Theoretical Physics Letters · 2

Works count: 45

Citation count: 100

H-index: 5

I10-index: