Work

Kinetics of hydride disintegration in a 2D Si channel formation by the Si–GeH4 MBE and demonstration of a Si/SiGe interface blurring in electrical characteristics of heterostructures

Year: 2005

Type: article

Source: Microelectronics Journal

DOI: 10.1016/j.mejo.2005.02.106

Authors: L.K. Orlov, N.L. Ivina, A.V. Potapov, T.N. Smyslova, L.M. Vinogradsky, Z.J. Horvath

Institution: Institute for Physics of Microstructures

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1964692200

FWCI: 0.307

Cites: 12

Cited by: 2

Related to: 10