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Author

C. Schmidt

Institution: Siemens (Germany)
OpenAlex ID: A5113498013
Three dimensional metallization for vertically integrated circuits
1997 · P. Ramm, D. Bollmann, et al. · Microelectronic Engineering · 91
XPS characterization of chromium films deposited from Cr(CO)6 at 248 nm
1989 · R. Nowak, P. Hess, et al. · Applied Surface Science · 32
Precision surface temperature measurement and film characterization for LICVD of a-Si: H from SiH4
1989 · K. Hesch, P. Hess, et al. · Applied Surface Science · 7
Three dimensional metallization for vertically integrated circuits
1997 · D. Bollmann, R. Braun, et al. · European Workshop Materials for Advanced Metallization, · 6
Laser CVD of a-Si:H from SiH4 and Si2H6: relations between chemistry, growth rate and film properties
1990 · K. Hesch, P. Hess, et al. · Applied Surface Science · 5
Validation of simplified fracture mechanics methods by testing of real components
1997 · G. Bartholomé, G. Senski, et al. · Nuclear Engineering and Design · 2
Laser CVD of A-Si:H: Film Properties and Mechanism
1988 · K. Hesch, P. Hess, et al. · MRS Proceedings · 2
Additive thin film technology for hybrid circuit fabrication
1985 · H.-J. Krokoszinski, H. Oetzmann, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2
Three dimensional metallization for vertically integrated circuits
1998 · D. Bollmann, R. Braun, et al. · European Workshop Materials for Advanced Metallization, · 1
Laser-Induced Association As A Possibility For Isotope Separation
1977 · C. Schmidt · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
Works count: 10
Citation count: 148
H-index: 5
I10-index: 2
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