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Three dimensional metallization for vertically integrated circuits

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Year: 1997
Type: article
Source: Microelectronic Engineering
DOI: 10.1016/s0167-9317(97)00092-0
Authors: P. Ramm, D. Bollmann, R. Braun, R. Buchner, U. Cao-Minh, M. Engelhardt, G. Errmann, T. Graßl, K. Hieber, H. Hübner, G. Kawala, M. Kleiner, A. Klumpp, S. Kühn, C. Landesberger, H. Lezec, W. Muth, W. Pamler, R. Popp, E. Renner, G. Ruhl, A. Sänger, U. Scheler, A. Schertel, C. Schmidt, S. Schwarzl, J. Weber, W. Weber
Institutions: Fraunhofer-Gesellschaft, Siemens (Germany)
Language: English

Topic: 3D IC and TSV technologies
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences

Open Access status: closed
OpenAlex ID: W2154309229
FWCI: 2.404
Cites: 5
Cited by: 91
Related to: 10
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