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Konrad Hieber

Observed names: Hieber, K., Hieber, Konrad 1944-, K Hieber, K. -H. Hieber, K. Hieber, K.-H. Hieber
OpenAlex ID: A5077764652
Structural and electrical properties of Ta and Ta nitrides deposited by chemical vapour deposition
1974 · K. Hieber · Thin Solid Films · 107
Three dimensional metallization for vertically integrated circuits
1997 · P. Ramm, D. Bollmann, et al. · Microelectronic Engineering · 91
Structural and electrical properties of evaporated Cr-Ni films as a function of gas pressure
1973 · L. Lassak, K. Hieber · Thin Solid Films · 52
Reduced self-heating in Si/SiGe field-effect transistors on thin virtual substrates prepared by low-energy plasma-enhanced chemical vapor deposition
2003 · T. Hackbarth, H.-J. Herzog, et al. · Applied Physics Letters · 36
Structural changes of evaporated tantalum during film growth
1982 · K. Hieber, N.M. Mayer · Thin Solid Films · 36
Structural and electrical properties of CrSi2 thin film resistors
1976 · K. Hieber, R. Dittmann · Thin Solid Films · 34
Structural and electrical properties of chromium and nickel films evaporated in the presence of oxygen
1974 · K. Hieber, L. Lassak · Thin Solid Films · 26
Amorphous chromium-silicon: A material for kilo-ohm sheet resistances
1979 · K. Hieber · Thin Solid Films · 25
Strained silicon FETs on thin SiGe virtual substrates produced by He implantation: effect of reduced self-heating on DC and RF performance
2004 · T. Hackbarth, H.-J. Herzog, et al. · Solid-State Electronics · 14
Universal chemical vapour deposition system for metallurgical coatings
1983 · M. Stolz, K. Hieber, et al. · Thin Solid Films · 11
Stabilization of sputtered β-tantalum by a tantalum silicide interlayer
1980 · K. Hieber, E. Lautenbacher · Thin Solid Films · 11
Influence of slight deviations from TaSi2 stoichiometry on the high-temperature stability of tantalum silicide/silicon contacts
1984 · H. Oppolzer, F. Neppl, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 10
Chemical vapour deposition of oxide and metal films for VLSI applications
1989 · K Hieber, H Körner, et al. · Thin Solid Films · 9
Possible applications of tantalum silicide for very-large-scale integration technology
1986 · K. Hieber, F. Neppl · Thin Solid Films · 8
Three dimensional metallization for vertically integrated circuits
1997 · D. Bollmann, R. Braun, et al. · European Workshop Materials for Advanced Metallization, · 6
Dopant diffusion from ion-implanted TaSi2 into Si
1987 · H. Gierisch, F. Neppl, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 6
Thin Films
2000 · Georg Wahl, Paul B. Davies, et al. · Ullmann's Encyclopedia of Industrial Chemistry · 5
The temperature coefficient of resistance of bulk Ta2N
1972 · K. Hieber, A. Meyer · Journal of the Less Common Metals · 5
LEPECVD — A Production Technique for SiGe MOSFETs and MODFETs
2005 · D. Chrastina, B. Rössner, et al. · Engineering materials and processes · 3
A SiGe HEMT Mixer IC with Low Conversion Loss
2003 · I. Kallfass, F. Gruson, et al. · European Microwave Conference (EuMC) · 3
Recent development in multilevel interconnect technology
1987 · H. Eggers, K. Hieber · Technical digest - International Electron Devices Meeting/Technical digest · 3
Dopant Diffusion From Ion- Implanted Tasi2
1986 · H. Gierishch, F. Neppl, et al. · MRS Proceedings · 2
A novel technique for in situ measurements of thin film properties
1985 · K. Hieber · Thin Solid Films · 2
Quantitative Röntgenfluoreszenz- und Beugungsanalysen an dünnen Schichten
1977 · Otto Eberspächer, K. Hieber · Mikrochimica acta. Supplementum · 2
Structural and electrical properties of pyrolytically deposited carmet films
1972 · K. Hieber · Thin Solid Films · 2
Works count: 37
Citation count: 516
H-index: 11
I10-index: 12
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