Work

Strained silicon FETs on thin SiGe virtual substrates produced by He implantation: effect of reduced self-heating on DC and RF performance

Year: 2004

Type: article

Source: Solid-State Electronics

DOI: 10.1016/j.sse.2004.05.037

Authors: T. Hackbarth, H.-J. Herzog, K.-H. Hieber, U. König, S. Mantl, B. Holländer, St. Lenk, H. von Känel, M. Enciso, F. Aniel, L. Giguerre

Institutions: Daimler (Germany), Forschungszentrum Jülich, Politecnico di Milano, Université Paris-Sud

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2139151287

FWCI: 2.849

Cites: 10

Cited by: 14

Related to: 10