Author

H.-J. Herzog

Observed names: H -J Herzog, H-J Herzog, H-j. Herzog, H. -J. Herzog, H. Herzog, H. J. Herzog, H. ‐J. Herzog, H.- J Herzog, H.-J Herzog, H.-J. HERZOG, H.J Herzog, H.J. Herzog, H.‐J. HERZOG, Hans-Joest Herzog, Hans-Joest Herzog Hans-Joest Herzog, Herzog, H. J., Herzog, H.-J.

Observed institutions: University of Stuttgart, Université Paris-Sud, AT&T (United States), Forschungszentrum Jülich, Universität Ulm, ETH Zurich, University of Warwick, Allgemeine Elektrizitäts Gesellschaft (Germany), Daimler (United Kingdom), Technische Universität Berlin, Fraunhofer-Gesellschaft, Technical University of Munich, University of Milano-Bicocca, Daimler (Germany)

OpenAlex ID: A5111533025

Strain-Induced Two-Dimensional Electron Gas in Selectively Doped Si/SixGe1−x Superlattices

1985 · G. Abstreiter, H. Brugger, et al. · Physical Review Letters · 496

High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer

1992 · F Schaffler, D Tobben, et al. · Semiconductor Science and Technology · 281

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A one-dimensional SiGe superlattice grown by UHV epitaxy

1975 · E. Kasper, H. J. Herzog, et al. · Applied Physics A · 262

The n-channel SiGe/Si modulation-doped field-effect transistor

1986 · H. Daembkes, H.-J. Herzog, et al. · IEEE Transactions on Electron Devices · 194

Elastic strain and misfit dislocation density in Si0.92Ge0.08 films on silicon substrates

1977 · E. Kasper, H.-J. Herzog · Thin Solid Films · 165

Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices

2004 · G. Isella, D. Chrastina, et al. · Solid-State Electronics · 154

Strain relaxation mechanism for hydrogen-implanted Si1−xGex/Si(100) heterostructures

2000 · H. Trinkaus, B. Holländer, et al. · Applied Physics Letters · 114

Secondary implantation of Sb into Si molecular beam epitaxy layers

1985 · H. Jorke, H.-J. Herzog, et al. · Applied Physics Letters · 111

Type-II band alignment in Si/ Si1−x Gex quantum wells from photoluminescence line shifts due to optically induced band-bending effects: Experiment and theory

1994 · T. Baier, U. Mantz, et al. · Physical review. B, Condensed matter · 110

X‐Ray Investigation of Boron‐ and Germanium‐Doped Silicon Epitaxial Layers

1984 · H. ‐J. Herzog, L. Csepregi, et al. · Journal of The Electrochemical Society · 96

Kinetics of ordered growth of Si on Si(100) at low temperatures

1989 · H. Jorke, H.-J. Herzog, et al. · Physical review. B, Condensed matter · 94

Strained layer superlattices

1987 · E. Kasper, H.-J. Herzog, et al. · Superlattices and Microstructures · 83

Growth of 100 GHz SiGe-Heterobipolar Transistor (HBT) Structures

1994 · Erich Kasper, Horst Kibbel, et al. · Japanese Journal of Applied Physics · 78

Folded acoustic phonons in Si- Six Ge1−x superlattices

1986 · H. Brugger, G. Abstreiter, et al. · Physical review. B, Condensed matter · 78

High hole mobility in Si0.17Ge0.83 channel metal–oxide–semiconductor field-effect transistors grown by plasma-enhanced chemical vapor deposition

2000 · G. Höck, E. Kohn, et al. · Applied Physics Letters · 76

Strain relaxation of pseudomorphic /(100) heterostructures after hydrogen or helium ion implantation for virtual substrate fabrication

2001 · B. Holländer, St. Lenk, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 72

Integration of waveguides and photodetectors in SiGe for 1.3 /spl mu/m operation

1994 · A. Splett, T. Zinke, et al. · IEEE Photonics Technology Letters · 72

Direct observation of band-edge luminescence and alloy luminescence from ultrametastable silicon-germanium alloy layers

1992 · J. Spitzer, K. Thonke, et al. · Applied Physics Letters · 71

Effect of helium ion implantation and annealing on the relaxation behavior of pseudomorphic Si1−xGex buffer layers on Si (100) substrates

2002 · M. Luysberg, D. Kirch, et al. · Journal of Applied Physics · 70

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Strain relaxation of epitaxial SiGe layers on Si(1 0 0) improved by hydrogen implantation

1999 · S. Mantl, B. Holländer, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 59

Relaxed SiGe buffers with thicknesses below 0.1 μm

2000 · M. Bauer, K. Lyutovich, et al. · Thin Solid Films · 55

Enhanced strain relaxation of epitaxial SiGe layers on Si(1 0 0) after H+ ion implantation

1999 · B Holländer, S Mantl, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 53

Photoluminescence of confined excitons in MBE-grown Si1 − xGex/Si(100) single quantum wells

1992 · M. Wachter, K. Thonke, et al. · Thin Solid Films · 47

Diffuse x-ray scattering from misfit dislocations in SiGe epitaxial layers with graded Ge content

1995 · V. Holý, J. H. Li, et al. · Journal of Applied Physics · 43

Carrier mobilities in modulation doped Si1−xGex heterostructures with respect to FET applications

1998 · G Höck, M Glück, et al. · Thin Solid Films · 39

Works count: 135

Citation count: 3,961

H-index: 30

I10-index: 65