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St. Lenk

Observed names: S Lenk, S. Lenk, St Lenk
OpenAlex ID: A5110067583
Tuning of NiSi∕Si Schottky barrier heights by sulfur segregation during Ni silicidation
2005 · Q. T. Zhao, U. Breuer, et al. · Applied Physics Letters · 143
Effective Schottky barrier lowering in silicon-on-insulator Schottky-barrier metal-oxide-semiconductor field-effect transistors using dopant segregation
2005 · J. Knoch, M. Zhang, et al. · Applied Physics Letters · 88
Strain relaxation of pseudomorphic /(100) heterostructures after hydrogen or helium ion implantation for virtual substrate fabrication
2001 · B. Holländer, St. Lenk, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 72
Effect of helium ion implantation and annealing on the relaxation behavior of pseudomorphic Si1−xGex buffer layers on Si (100) substrates
2002 · M. Luysberg, D. Kirch, et al. · Journal of Applied Physics · 70
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Gadolinium scandate thin films as an alternative gate dielectric prepared by electron beam evaporation
2006 · M. Wagner, T. Heeg, et al. · Applied Physics Letters · 67
Amorphous ternary rare-earth gate oxides for future integration in MOSFETs
2009 · J.M.J. Lopes, E. Durğun Özben, et al. · Microelectronic Engineering · 60
Schottky barrier height modulation using dopant segregation in schottky-barrier SOI-MOSFETs
2005 · M. Zhang, J. Knoch, et al. · European Solid-State Device Research Conference · 56
Morphology and structure of laser-modified Ge2Sb2Te5 films studied by transmission electron microscopy
2001 · I Friedrich, V Weidenhof, et al. · Thin Solid Films · 55
Schottky-barrier height tuning of NiGe/n-Ge contacts using As and P segregation
2008 · M. Mueller, Q.T. Zhao, et al. · Materials Science and Engineering B · 42
Experimental demonstration of strained Si nanowire GAA n-TFETs and inverter operation with complementary TFET logic at low supply voltages
2015 · G.V. Luong, S. Strangio, et al. · Solid-State Electronics · 40
Integration of $\hbox{LaLuO}_{3} \ (\kappa \sim \hbox{30})$ as High-$\kappa$ Dielectric on Strained and Unstrained SOI MOSFETs With a Replacement Gate Process
2010 · E. Durgun Ozben, S. Mantl, et al. · IEEE Electron Device Letters · 34
Metal–germanium–metal ultrafast infrared detectors
2002 · D. Buca, S. Winnerl, et al. · Journal of Applied Physics · 30
Effects of annealing on the electrical and interfacial properties of amorphous lanthanum scandate high-κ films prepared by molecular beam deposition
2007 · J. M. J. Lopes, U. Littmark, et al. · Journal of Applied Physics · 29
Characterization and electrical properties of high-k GdScO3 thin films grown by atomic layer deposition
2007 · P. Myllymäki, M. Roeckerath, et al. · Applied Physics A · 28
Gadolinium scandate as an alternative gate dielectric in field effect transistors on conventional and strained silicon
2008 · M. Roeckerath, J. M. J. Lopes, et al. · Applied Physics A · 26
Asymmetric strain relaxation in patterned SiGe layers: A means to enhance carrier mobilities in Si cap layers
2007 · D. Buca, B. Holländer, et al. · Applied Physics Letters · 26
SmScO 3 thin films as an alternative gate dielectric
2008 · E. Durğun Özben, J. M. J. Lopes, et al. · Applied Physics Letters · 24
High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate
2011 · W. Yu, B. Zhang, et al. · Solid-State Electronics · 21
Formation of ternary Ni-silicide on relaxed and strained SiGe layers
2004 · Q.T. Zhao, D. Buca, et al. · Microelectronic Engineering · 21
Systematic study of Schottky barrier MOSFETs with dopant segregation on thin-body SOI
2010 · C. Urban, C. Sandow, et al. · Solid-State Electronics · 19
Fabrication of epitaxial CoSi2 nanowires
2001 · P. Kluth, Q. T. Zhao, et al. · Applied Physics Letters · 19
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Fast time response from Si–SiGe undulating layer superlattices
2002 · D. Buca, S. Winnerl, et al. · Applied Physics Letters · 18
Segregation of ion implanted sulfur in Si(100) after annealing and nickel silicidation
2007 · Q. T. Zhao, U. Breuer, et al. · Journal of Applied Physics · 16
Low temperature measurements of Schottky-barrier SOI-MOSFETs with dopant segregation
2005 · M. Zhang, J. Knoch, et al. · Electronics Letters · 16
Luminescence lifetime of the 1.5-μm emission of β-FeSi2 precipitate layers in silicon
2002 · B Schuller, R Carius, et al. · Microelectronic Engineering · 16
Works count: 66
Citation count: 1,223
H-index: 19
I10-index: 31
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