Work

Tuning of NiSi∕Si Schottky barrier heights by sulfur segregation during Ni silicidation

Year: 2005

Type: article

Abstract: The Schottky barrier height (SBH) of NiSi on Si(100) was tuned in a controlled manner by the segregation of sulfur (S) to the silicide∕silicon interface. S was implanted into silicon prior to silicidation. During subsequent Ni silicidation, the segregation of S at the NiSi∕Si interface leads to the change of the SBH. The SBH of NiSi decreased gradually on n-Si(100) from 0.65eV to 0.07eV and increased correspondingly on p-Si(100).

Source: Applied Physics Letters

DOI: 10.1063/1.1863442

Authors: Q. T. Zhao, U. Breuer, E. Rije, St. Lenk, S. Mantl

Institution: Forschungszentrum Jülich

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W2016290247

FWCI: 6.129

Cites: 13

Cited by: 143

Related to: 10