Author

Sandro J. Di Giacomo

Observed names: Di Giacomo, Sandro J., Di Giacomo, Sandro John, S.J. Di Giacomo, S.J. DiGiacomo

Observed institutions: Northrop Grumman (United States), The Ohio State University, University of Delaware

OpenAlex ID: A5113516756

RF Performance and Modeling of Si/SiGe Resonant Interband Tunneling Diodes

2005 · N. Jin, S.-Y. Chung, et al. · IEEE Transactions on Electron Devices · 19

Fabrication of nanowires with high aspect ratios utilized by dry etching with SF6:C4F8 and self-limiting thermal oxidation on Si substrate

2010 · Si-Young Park, Sandro J. Di Giacomo, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 18

Development of δB/i-Si/δSb and δB/i-Si/δSb/i-Si/δB resonant interband tunnel diodes for integrated circuit applications

2002 · S.L. Rommel, Niu Jin, et al. · Conference digest · 2

Demonstration of a scalable all-solid-state refrigerator exploiting diffusion geometries and limiting interfacial conductances at temperatures below 1 kelvin

2026 · Young, Robert M., Stegen, Zachary, et al. · arXiv (Cornell University) · 1

PDF

Works count: 5

Citation count: 40

H-index: 2

I10-index: 2