Author

Yangsoo Sohn

Institutions: Samsung (South Korea), Samsung Electronics (South Korea)

Observed institutions: Samsung (South Korea), Samsung Electronics (South Korea)

OpenAlex ID: A5113521065

Novel stress-memorization-technology (SMT) for high electron mobility enhancement of gate last high-k/metal gate devices

2010 · Kwan-Yong Lim, Hyunjung Lee, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 37

Works count: 1

Citation count: 37

H-index: 1

I10-index: 1