Novel stress-memorization-technology (SMT) for high electron mobility enhancement of gate last high-k/metal gate devices
Year: 2010
Type: conference-paper
Authors: Kwan-Yong Lim, Hyunjung Lee, Choongryul Ryu, Kang-Ill Seo, Uihui Kwon, Seokhoon Kim, Jongwan Choi, Kyungseok Oh, Hee-Kyung Jeon, Chulgi Song, Tae-Ouk Kwon, Jinyeong Cho, Seunghun Lee, Yangsoo Sohn, Hong Sik Yoon, Junghyun Park, Kwanheum Lee, Wookje Kim, Eunha Lee, Sang-Pil Sim, Chung Geun Koh, Sang Bom Kang, Siyoung Choi, Chilhee Chung
Institutions: Samsung (South Korea), Samsung Electronics (South Korea)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1965569008