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Kwan-Yong Lim

Observed names: Kwan-yong Lim, Lim Kwan-yong
OpenAlex ID: A5112426751
Adhesion and interface chemical reactions of Cu/polyimide and Cu/TiN by XPS
2003 · Won-Jun Lee, Youn-Seoung Lee, et al. · Applied Surface Science · 105
Characteristics of n+ polycrystalline-Si/Al2O3/Si metal–oxide– semiconductor structures prepared by atomic layer chemical vapor deposition using Al(CH3)3 and H2O vapor
2001 · Dae-Gyu Park, Heung-Jae Cho, et al. · Journal of Applied Physics · 84
Robust ternary metal gate electrodes for dual gate CMOS devices
2002 · Dae-Gyu Park, Tae-Ho Cha, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 66
Impact of atomic-layer-deposited TiN on the gate oxide quality of W/TiN/SiO2/Si metal–oxide–semiconductor structures
2002 · Dae-Gyu Park, Kwan-Yong Lim, et al. · Applied Physics Letters · 50
Electrical characteristics and thermal stability of n+ polycrystalline- Si/ZrO2/SiO2/Si metal–oxide–semiconductor capacitors
2002 · Kwan-Yong Lim, Dae-Gyu Park, et al. · Journal of Applied Physics · 42
Novel stress-memorization-technology (SMT) for high electron mobility enhancement of gate last high-k/metal gate devices
2010 · Kwan-Yong Lim, Hyunjung Lee, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 37
Novel damage-free direct metal gate process using atomic layer deposition
2002 · Dae-Gyu Park, Kwan-Yong Lim, et al. · Symposium on VLSI Technology · 17
Effects of TiN Deposition on the Characteristics of W/TiN/SiO[sub 2]/Si Metal Oxide Semiconductor Capacitors
2001 · Dae-Gyu Park, Heung-Jae Cho, et al. · Journal of The Electrochemical Society · 16
Thermal Stability of TaSi[sub x]N[sub y] Films Deposited by Reactive Sputtering on SiO[sub 2]
2003 · You-Seok Suh, Greg P. Heuss, et al. · Journal of The Electrochemical Society · 15
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Boron penetration and thermal instability of p+ polycrystalline-Si/ZrO2/SiO2/n-Si metal-oxide-semiconductor structures
2002 · Dae-Gyu Park, Kwan-Yong Lim, et al. · Journal of Applied Physics · 15
Technology viable DC performance elements for Si/SiGe channel CMOS FinFTT
2016 · Gen Tsutsui, Ruqiang Bao, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 12
Suppressed boron penetration in p+ polycrystalline-Si/Al2O3/Si metal–oxide–semiconductor structures
2002 · Heung-Jae Cho, Dae-Gyu Park, et al. · Applied Physics Letters · 11
Epitaxial C49–TiSi2 phase formation on the silicon (100)
2003 · Jun-Mo Yang, Ju-Chul Park, et al. · Journal of Applied Physics · 9
Roles of Ti, TiN, and WN as an Interdiffusion Barrier for Tungsten Dual Polygate Stack in Memory Devices
2007 · Min Gyu Sung, Kwan-Yong Lim, et al. · Japanese Journal of Applied Physics · 8
Reliability Characteristics of W/WN/TaO[sub x]N[sub y]/SiO[sub 2]/Si Metal Oxide Semiconductor Capacitors
2002 · Heung-Jae Cho, Tae-Ho Cha, et al. · Journal of The Electrochemical Society · 7
Novel Capacitorless Single-Transistor Charge-Trap DRAM (1T CT DRAM) Utilizing Electrons
2010 · M Gunhan Ertosun, Kwan-Yong Lim, et al. · IEEE Electron Device Letters · 5
Gate Oxide Reliability Characterization of Tungsten Polymetal Gate with Low-Contact-Resistive WSix/WN Diffusion Barrier in Memory Devices
2007 · Min Gyu Sung, Kwan-Yong Lim, et al. · Japanese Journal of Applied Physics · 5
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Impact of Thin WSIX Insertion in Tungsten Polymetal Gate on Gate Oxide Reliability and Gate Contact Resistance
2006 · Min Sung, Kwan-yong Lim, et al. · IEEE International Reliability Physics Symposium proceedings · 5
Dependence of Gate Interfacial Resistance on the Formation of Insulative Boron–Nitride for p-Channel Metal–Oxide–Semiconductor Field-Effect Transistor in Tungsten Dual Polygate Memory Devices
2008 · Min Gyu Sung, Kwan-Yong Lim, et al. · Japanese Journal of Applied Physics · 4
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Reliability of Recess-channel Gate Cell Transistor under Gate-Induced Drain Leakage Stress and Positive Bias Fowler-Nordheim Gate Stress
2006 · Heung-jae Cho, Yong Kim, et al. · European Solid-State Device Research Conference · 4
Effect of gate hard mask and sidewall spacer structures on the gate oxide reliability of W∕WNx∕poly-Si gate MOSFET for high density DRAM applications
2005 · Kwan-Yong Lim, Heung-Jae Cho, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 4
Degradation of Nitride/W/WNx/Poly-Si Gate Stack by Post-Thermal Processes
2005 · Heung-Jae Cho, Se-Aug Jang, et al. · Japanese Journal of Applied Physics · 4
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Studies on the interfacial and crystallographic characteristics of Al2O3∕SiO2∕Si and ZrO2∕SiO2∕Si stacks
2005 · Joong-Jung Kim, Jun-Mo Yang, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 4
Influence of Hydrogen Incorporation on the Reliability of Gate Oxide Formed by Using Low-Temperature Plasma Selective Oxidation Applicable to Sub-50-nm W-Polymetal Gate Devices
2008 · Kwan-Yong Lim, Min-Gyu Sung, et al. · IEEE Electron Device Letters · 3
Impact of gate sidewall spacer structures on DRAM cell transistors under Fowler-Nordheim and gate-induced drain leakage stress conditions
2004 · Kwan-Yong Lim, Se-Aug Jang, et al. · IEEE International Reliability Physics Symposium proceedings · 2
Works count: 41
Citation count: 539
H-index: 11
I10-index: 12
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