Work

Novel Capacitorless Single-Transistor Charge-Trap DRAM (1T CT DRAM) Utilizing Electrons

Year: 2010

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2010.2043634

Authors: M Gunhan Ertosun, Kwan-Yong Lim, Chanro Park, Jungwoo Oh, Paul Kirsch, Krishna C Saraswat

Institution: Stanford University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2159197409

FWCI:

Cites: 15

Cited by: 5

Related to: 10