Work

Roles of Ti, TiN, and WN as an Interdiffusion Barrier for Tungsten Dual Polygate Stack in Memory Devices

Year: 2007

Type: article

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.46.2134

Authors: Min Gyu Sung, Kwan-Yong Lim, Heung-Jae Cho, Seung Ryong Lee, Se-Aug Jang, Yong Soo Kim, Moon Sig Joo, Ju-Hee Lee, Tae-Yoon Kim, Hong-Seon Yang, Seung-Ho Pyi, Jin Woong Kim

Institution: SK Group (United States)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1986012760

FWCI: 0.917

Cites: 10

Cited by: 8

Related to: 10