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Hiroto Ohtake

Pulse–time-modulated electron cyclotron resonance plasma discharge for highly selective, highly anisotropic, and charge-free etching
1996 · Seiji Samukawa, Hiroto Ohtake, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 109
Two-Dimensional Self-Consistent Simulation of a DC Magnetron Discharge
1999 · Eiji Shidoji, Hiroto Ohtake, et al. · Japanese Journal of Applied Physics · 64
Prediction of UV spectra and UV-radiation damage in actual plasma etching processes using on-wafer monitoring technique
2010 · Butsurin Jinnai, Seiichi Fukuda, et al. · Journal of Applied Physics · 58
Charge-free etching process using positive and negative ions in pulse-time modulated electron cyclotron resonance plasma with low-frequency bias
1996 · Hiroto Ohtake, Seiji Samukawa · Applied Physics Letters · 49
Simulation of a Pulse Time-Modulated Bulk Plasma in Cl2
1996 · Ayumi Yokozawa, Hiroto Ohtake Hiroto Ohtake, et al. · Japanese Journal of Applied Physics · 41
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SiN etching characteristics of Ar/CH 3 F/O 2 plasma and dependence on SiN film density
2016 · Hiroto Ohtake, Tomiko Wanifuchi, et al. · Japanese Journal of Applied Physics · 26
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Low-damage low-k etching with an environmentally friendly CF3I plasma
2008 · Eiichi Soda, Seiichi Kondo, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 25
Highly selective low-damage processes using advanced neutral beams for porous low-k films
2005 · Hiroto Ohtake, Nobuhiko Inoue, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 25
Structure-designable method to form super low-kSiOC film (k= 2.2) by neutral-beam-enhanced chemical vapour deposition
2009 · Shigeo Yasuhara, Juhyun Chung, et al. · Journal of Physics D Applied Physics · 21
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Pulse-time-modulated inductively coupled plasma etching for high-performance polysilicon patterning on thin gate oxides
2000 · Hiroto Ohtake, Ko Noguchi, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 21
Enhancement of Reactivity in Au Etching by Pulse-Time-Modulated Cl2 Plasma
1998 · Hiroto Ohtake, Seiji Samukawa, et al. · Japanese Journal of Applied Physics · 21
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Mechanical Property Control of Low-k Dielectrics for Diminishing Chemical Mechanical Polishing (CMP)-Related Defects in Cu-Damascene Interconnects
2004 · Ken-ichiro Hijioka, Fuminori Ito, et al. · Japanese Journal of Applied Physics · 20
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Isotropic atomic layer etchings of various materials by using dry chemical removal
2022 · Hiroto Ohtake, Nobuya Miyoshi, et al. · Japanese Journal of Applied Physics · 18
200-mm-diameter neutral beam source based on inductively coupled plasma etcher and silicon etching
2010 · Tomohiro Kubota, Osamu Nukaga, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 14
Ion and Neutral Temperatures in a Novel Ultrahigh-Frequency Discharge Plasma
1996 · Toshiki Nakano Toshiki Nakano, Hiroto Ohtake Hiroto Ohtake, et al. · Japanese Journal of Applied Physics · 14
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Characterization of CO2 plasma ashing for less low-dielectric-constant film damage
2015 · Yoshio Susa, Hiroto Ohtake, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 13
Environmentally harmonized CF3I plasma for low-damage and highly selective low-k etching
2008 · Seiji Samukawa, Yoshinari Ichihashi, et al. · Journal of Applied Physics · 13
Feasibility Study of 45-nm-Node Scaled-Down Cu Interconnects With Molecular-Pore-Stacking (MPS) SiOCH Films
2007 · Munehiro Tada, Hiroto Ohtake, et al. · IEEE Transactions on Electron Devices · 13
Real-time monitoring of charge accumulation during pulse-time-modulated plasma
2006 · Hiroto Ohtake, Butsurin Jinnai, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 13
On-wafer monitoring of charge accumulation and sidewall conductivity in high-aspect-ratio contact holes during SiO2 etching process
2007 · Butsurin Jinnai, Toshiyuki Orita, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 11
Characterization of process-induced charging damage in scaled-down devices and reliability improvement using time-modulated plasma
2000 · Ko Noguchi, Seiji Samukawa, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 10
Prediction of Abnormal Etching Profile in High-Aspect-Ratio Via/Hole Etching Using On-Wafer Monitoring System
2010 · Hiroto Ohtake, Seiichi Fukuda, et al. · Japanese Journal of Applied Physics · 9
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Mechanisms of silicon damage during N2/H2 organic etching for fin field-effect-transistor CMOS
2015 · Tamotsu Morimoto, Hiroto Ohtake, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 8
Effect of supplied substrate bias frequency in ultrahigh-frequency plasma discharge for precise etching processes
1996 · Seiji Samukawa, Hiroto Ohtake, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 8
On-wafer monitoring of electron and ion energy distribution at the bottom of contact hole
2007 · Hiroto Ohtake, Butsurin Jinnai, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 7
Works count: 39
Citation count: 655
H-index: 14
I10-index: 21
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