Author

Christopher D. Beling

Observed names: Beling C D, Beling CD, Beling, C. D., C D Beling, C. B. Beling, C. Beling, C. D Beling, C. D. Beling, C.B. Beling, C.D Beling, C.D. Beling, CD Beling, Chris D. Beling

Observed institutions: University of London, St Bartholomew's Hospital, Hong Kong Polytechnic University, Queen Mary University of London, City University of Hong Kong, Hong Kong University of Science and Technology, Brookhaven National Laboratory, University College London, Washington State University, University of Hong Kong

OpenAlex ID: A5113534237

Defects in ZnO Nanorods Prepared by a Hydrothermal Method

2006 · K. H. Tam, C. K. Cheung, et al. · The Journal of Physical Chemistry B · 764

Undoped p‐Type ZnO Nanorods Synthesized by a Hydrothermal Method

2008 · Yuk Fan Hsu, Yan Yan Xi, et al. · Advanced Functional Materials · 111

Current transport studies of ZnO∕p-Si heterostructures grown by plasma immersion ion implantation and deposition

2006 · X. D. Chen, C. C. Ling, et al. · Applied Physics Letters · 83

Influence of gaseous annealing environment on the properties of indium-tin-oxide thin films

2004 · R. X. Wang, C. D. Beling, et al. · Journal of Applied Physics · 70

Hydrogen peroxide treatment induced rectifying behavior of Au∕n-ZnO contact

2007 · Q. L. Gu, C. C. Ling, et al. · Applied Physics Letters · 69

A systematic approach to the measurement of ideality factor, series resistance, and barrier height for Schottky diodes

1992 · T. C. Lee, S. Fung, et al. · Journal of Applied Physics · 61

Au / n -ZnO rectifying contact fabricated with hydrogen peroxide pretreatment

2008 · Q. L. Gu, C. K. Cheung, et al. · Journal of Applied Physics · 52

Electron-irradiation-induced deep levels in n-type 6H–SiC

1999 · M. Gong, S. Fung, et al. · Journal of Applied Physics · 51

A field-assisted moderator for low-energy positron beams

1987 · C. D. Beling, R. I. Simpson, et al. · Applied Physics A · 48

Structural and defect characterization of GaAs and AlxGa1−xAs grown at low temperature by molecular beam epitaxy

1997 · S. Fleischer, C. D. Beling, et al. · Journal of Applied Physics · 44

Nature of the acceptor responsible for p-type conduction in liquid encapsulated Czochralski-grown undoped gallium antimonide

2004 · C. C. Ling, M. K. Lui, et al. · Applied Physics Letters · 42

The production of collimated beams of o-Ps atoms using charge exchange in positron-gas collisions

1987 · G Laricchia, M Charlton, et al. · Journal of Physics B Atomic and Molecular Physics · 42

Isochronal annealing studies ofn-type 6H -SiC with positron lifetime spectroscopy

2000 · C. C. Ling, C. D. Beling, et al. · Physical review. B, Condensed matter · 41

Arsenic doped p-type zinc oxide films grown by radio frequency magnetron sputtering

2009 · J. C. Fan, C. Y. Zhu, et al. · Journal of Applied Physics · 39

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Micro-Raman and photoluminescence studies of neutron-irradiated gallium nitride epilayers

2005 · R. X. Wang, S. J. Xu, et al. · Applied Physics Letters · 38

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Defect formation and annealing behaviors of fluorine-implanted GaN layers revealed by positron annihilation spectroscopy

2009 · M. J. Wang, L. Yuan, et al. · Applied Physics Letters · 37

Formation mechanism of a degenerate thin layer at the interface of a GaN/sapphire system

2000 · X. L. Xu, C. D. Beling, et al. · Applied Physics Letters · 37

Influence of annealing temperature and environment on the properties of indium tin oxide thin films

2005 · R X Wang, C D Beling, et al. · Journal of Physics D Applied Physics · 36

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Current transport and its effect on the determination of the Schottky-barrier height in a typical system: Gold on silicon

1993 · T.P. Chen, T.C. Lee, et al. · Solid-State Electronics · 35

Nature of the bulk defects in GaAs through high-temperature quenching studies

1996 · C. V. Reddy, S. Fung, et al. · Physical review. B, Condensed matter · 34

Formation of PIn defect in annealed liquid-encapsulated Czochralski InP

1998 · Y. W. Zhao, X. L. Xu, et al. · Applied Physics Letters · 33

Experimental study and modeling of the influence of screw dislocations on the performance of Au/n-GaN Schottky diodes

2003 · Y. Huang, X. D. Chen, et al. · Journal of Applied Physics · 32

Photoinduced Dehydrogenation of Defects in Undoped a -Si:H Using Positron Annihilation Spectroscopy

2000 · X. Zou, Y. C. Chan, et al. · Physical Review Letters · 32

Properties of ITO thin films deposited on amorphous and crystalline substrates with e-beam evaporation

2004 · R X Wang, C D Beling, et al. · Semiconductor Science and Technology · 31

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Deep level transient spectroscopic study of neutron-irradiated n-type 6H–SiC

2003 · X. D. Chen, S. Fung, et al. · Journal of Applied Physics · 31

Works count: 261

Citation count: 3,225

H-index: 27

I10-index: 76