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R. de Kort
Observed names:
Kort, R.,
R de Kort,
Randy de Kort,
de Kort, R.
Observed institutions:
Radboud University Nijmegen,
Philips (Netherlands),
Signify (Netherlands)
OpenAlex ID:
A5113537832
Real-space imaging of an orbital Kondo resonance on the Cr(001) surface
2002
·
O. Yu. Kolesnychenko
, R. de Kort
, et al.
·
Nature
·
80
RF capacitance-voltage characterization of MOSFETs with high leakage dielectrics
2003
·
J. Schmitz
, F.N. Cubaynes
, et al.
·
IEEE Electron Device Letters
·
73
PDF
Improved Y-factor method for wide-band on-wafer noise-parameter measurements
2005
·
L.F. Tiemeijer
, R.J. Havens
, et al.
·
IEEE Transactions on Microwave Theory and Techniques
·
59
Record RF performance of standard 90 nm CMOS technology
2005
·
L.F. Tirmejer
, R.J. Havens
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
43
PDF
Zn- and Cd-induced features at the GaAs(110) and InP(110) surfaces studied by low-temperature scanning tunneling microscopy
2001
·
R. de Kort
, M. C. M. M. van der Wielen
, et al.
·
Physical review. B, Condensed matter
·
41
Predictive spiral inductor compact model for frequency and time domain
2004
·
L.F. Tiemeijer
, R.J. Havens
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
38
Surface electronic structure of Cr(001): Experiment and theory
2005
·
O. Yu. Kolesnychenko
, G. M. M. Heijnen
, et al.
·
Physical Review B
·
36
Compact modelling of noise for RF CMOS circuit design
2004
·
A.J. Scholten
, L.F. Tiemeijer
, et al.
·
IEE Proceedings - Circuits Devices and Systems
·
32
Modelling the excess noise due to avalanche multiplication in (hetero-junction) bipolar transistors
2004
·
J.C.J. Paasschens
, R. de Kort
·
IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
·
18
Atomically flat ultra-clean Cr(001) surfaces produced by cleavage of a single crystal: scanning tunneling microscopy and spectroscopy study
2001
·
O.Yu. Kolesnychenko
, R. de Kort
, et al.
·
Surface Science
·
16
Metal emitter SiGe:C HBTs
2005
·
J.J.T.M. Donkers
, T. Vanhoucke
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
15
Test structure design considerations for RF-CV measurements on leaky dielectrics
2003
·
J. Schmitz
, F.N. Cubaynes
, et al.
·
IEEE International Conference on Microelectronic Test Structures (ICMTS)
·
10
A low-temperature scanning tunneling microscopy study on the Sn- and Zn-doped InP(1 1 0) surfaces
2001
·
R de Kort
, W Kets
, et al.
·
Surface Science
·
9
Gate-capacitance extraction from RF C-V measurements [MOS device applications]
2004
·
G.T. Sasse
, R. de Kort
, et al.
·
European Solid-State Circuits Conference (ESSCIRC)
·
5
The RF-CV method for characterization of leaky gate dielectrics
2004
·
J. Schmitz
, F.N. Cubaynes
, et al.
·
Microelectronic Engineering
·
2
PDF
Scanning Tunneling Spectroscopy Study of Surface States of 3d Metals: Chemical Identification, Magnetic Contrast and Orbital Kondo Resonance States
2003
·
M.M.J. Bischoff
, C.M. Fang
, et al.
·
Acta Physica Polonica A
·
2
PDF
Compact modeling of noise for RF CMOS circuit simulation
2003
·
Andries J. Scholten
, Luuk F. Tiemeijer
, et al.
·
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
·
2
Heavily doped III-V semiconductors studied by low-temperature scanning tunneling microscopy
2007
·
R. de Kort
·
Radboud Repository (Radboud University)
PDF
Structural Studies of Reactions - Can we Grasp a Picosecond?
2000
·
Ursby, T.
, Techert, S.
, et al.
·
Max Planck Institute for Plasma Physics
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Works count:
20
Citation count:
483
H-index:
11
I10-index:
12
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