Get started
Author

Han-Chi Lin

OpenAlex ID: A5113546248
A study on NiGe-contacted Ge n+/p Ge shallow junction prepared by dopant segregation technique
2015 · Bing-Yue Tsui, Jhe-Ju Shih, et al. · Solid-State Electronics · 9
First-principles Study of the NiGe/Ge Schottky Barrier Height under Dopant Segregation
2015 · Chiung-Yuan Lin, Han-Chi Lin · Bulletin of the American Physical Society
First-principles calculations on the schottky barrier height of the NiGe/N-type Ge contact with dopant segregation
2014 · Han-Chi Lin, Chiung-Yuan Lin, et al. · International Symposium on Next-Generation Electronics
Critical Current Densities of Submillimeter Single-Grain Tl-2223 Superconducting Thin Film
1996 · Han-Chi Lin, Jenh-Yih Juang, et al. · Japanese Journal of Applied Physics
PDF
Works count: 4
Citation count: 9
H-index: 1
I10-index:
Year
Topic
Type