Work

First-principles calculations on the schottky barrier height of the NiGe/N-type Ge contact with dopant segregation

Year: 2014

Type: conference-paper

Source: International Symposium on Next-Generation Electronics

DOI: 10.1109/isne.2014.6839344

Authors: Han-Chi Lin, Chiung-Yuan Lin, Che-Ju Shih, Bing-Yue Tsui

Institution: National Yang Ming Chiao Tung University

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Council, National Chiao Tung University

OpenAlex ID: W2058714037

FWCI:

Cites: 10

Cited by:

Related to: 10