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Antonio Munoz-Yague

Observed names: A Munoz-Yague, A Muñoz-Yague, A Muñoz-Yagüe, A. MUNOZ-YAGUE, A. MUNOZ‐YAGUE, A. MUÑOS-YAGÜE, A. Munoz Yague, A. Munoz-Yague, A. Munoz-yague, A. Munoz-yaque, A. Munoz‐Yague, A. Muñoz-Yagüe, A. Muñoz Yagüe, A. Muñoz-Yague, A. Muñoz-Yagüe, A. Muñoz–Yague, Antoine Munoz-Yague, Antonio Munoz-Yagüe, Antonio Muñoz-Yagüe, Munoz Yague, A., Munoz-Yague, A., Munoz-Yaque, A., Munoz-Yaque, A. (ed.), Muñoz-Yagüe, A.
OpenAlex ID: A5113552215
Microtwinning and growth defects in GaAs MBE layers
1982 · M. Bafleur, A. Munoz-Yague, et al. · Journal of Crystal Growth · 88
GaAs/(Ca,Sr)F2/(001) GaAs lattice-matched structures grown by molecular beam epitaxy
1984 · S. Siskos, C. Fontaine, et al. · Applied Physics Letters · 72
Optical determination of strains in heterostructures: GaAs/Si as an example
1989 · G. Landa, R. Carles, et al. · Journal of Applied Physics · 70
Raman study of longitudinal optical phonon-plasmon coupling and disorder effects in heavily Be-doped GaAs
1991 · A. Mlayah, R. Carles, et al. · Journal of Applied Physics · 69
Epitaxial growth of lattice-matched CaxSr1−xF2 on (100) and (110) GaAs substrates
1984 · S. Siskos, C. Fontaine, et al. · Journal of Applied Physics · 57
Preparation of Carbon‐Free GaAs Surfaces: AES and RHEED Analysis
1981 · A. Munoz‐Yague, J. Piqueras, et al. · Journal of The Electrochemical Society · 56
Raman determination of the composition in semiconductor ternary solid solutions
1987 · N. Saint-Cricq, G. Landa, et al. · Journal of Applied Physics · 34
Raman characterization of twinning in heteroepitaxial semiconductor layers: GaAs/(Ca,Sr)F2
1986 · G. Landa, R. Carles, et al. · Journal of Applied Physics · 33
Er3+ doping of CaF2 layers grown by molecular beam epitaxy
1993 · E. Daran, L. E. Bausa, et al. · Applied Physics Letters · 30
Infrared-laser-induced upconversion from Nd3+:LaF3 heteroepitaxial layers on CaF2(111) substrates by molecular beam epitaxy
2000 · X. Zhang, C. Serrano, et al. · Physical review. B, Condensed matter · 27
Nd3+ incorporation in CaF2 layers grown by molecular beam epitaxy
1991 · L. E. Bausá, R. Legros, et al. · Applied Physics Letters · 26
Two-dimensional-like nucleation of GaAs on Si by room-temperature deposition
1988 · J. Castagné, C. Fontaine, et al. · Journal of Applied Physics · 26
Low phonon energy, Nd:LaF/sub 3/ channel waveguide lasers fabricated by molecular beam epitaxy
2001 · T. Bhutta, A.M. Chardon, et al. · IEEE Journal of Quantum Electronics · 23
Raman study under resonant conditions of defects near the interface in a GaAs/Si heterostructure
1990 · A. Mlayah, R. Carles, et al. · Journal of Applied Physics · 22
1.54 μm wavelength emission of highly Er-doped CaF2 layers grown by molecular-beam epitaxy
1994 · E. Daran, R. Legros, et al. · Journal of Applied Physics · 20
High-resolution electron microscopy study of (Ca,Sr)F2/GaAs grown by molecular-beam epitaxy
1987 · Hélène Héral, Louis Bernard, et al. · Journal of Applied Physics · 19
A GaAlAs-GaAs integrated coherence modulator
1999 · S. Khalfallah, P. Dubreuil, et al. · Journal of Lightwave Technology · 17
Effect of growth temperature and doping concentration on the distribution of the emitting centers in CaF2:Er molecular beam epitaxial layers
1994 · E. Daran, R. Legros, et al. · Journal of Applied Physics · 17
Molecular beam epitaxy of Nd-doped CaF2 and CaSrF2 layers on Si and GaAs substrates
1992 · L. E. Bausá, C. Fontaine, et al. · Journal of Applied Physics · 17
Effect of Nd3+ concentration on the emission spectra of CaF2:Nd layers grown by molecular-beam epitaxy
1991 · L. E. Bausá, R. Legros, et al. · Journal of Applied Physics · 17
A comparative study of methods of measuring carrier lifetime in p-i-n devices
1980 · M. Derdouri, P. Leturcq, et al. · IEEE Transactions on Electron Devices · 17
Raman study of electron confinement in Si δ-doped GaAs
1993 · A. Mlayah, R. Carles, et al. · Applied Physics Letters · 15
Photoluminescence of molecular beam epitaxially grown Ge-doped GaAs
1983 · M. Bafleur, A. Munoz-Yague, et al. · Journal of Applied Physics · 15
Highly polarized photoluminescence from 2-μm-thick strained GaAs grown on CaF2
1994 · Leandro R. Tessler, Claudine Hermann, et al. · Applied Physics Letters · 14
Polar phonon-intersubband plasmon coupling in Si delta-doped GaAs
1993 · A. Mlayah, R. Carles, et al. · Journal of Applied Physics · 14
Works count: 105
Citation count: 1,180
H-index: 17
I10-index: 40
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