Work

Highly polarized photoluminescence from 2-μm-thick strained GaAs grown on CaF2

Year: 1994

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.110988

Authors: Leandro R. Tessler, Claudine Hermann, Georges Lampel, Yves Lassailly, Chantal Fontaine, Emmanuelle Daran, Antonio Muñoz-Yagüe

Institutions: Centre National de la Recherche Scientifique, École Polytechnique, Laboratoire de Physique de la Matière Condensée

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2082043792

FWCI: 1.421

Cites: 14

Cited by: 14

Related to: 10