Author

J.J. Brown

Observed names: J. Brown, J. J. Brown, Jukie J. Brown

Institution: Universal Display Corporation

Observed institutions: University of Southern California, IBM (United States), University of Padua, University of Alberta, University of California, Santa Barbara, University of New Mexico, HRL Laboratories (United States), Princeton University, Universal Display Corporation

OpenAlex ID: A5113560347

High-efficiency top-emitting organic light-emitting devices

2002 · M.-H. Lu, M. S. Weaver, et al. · Applied Physics Letters · 185

112-GHz, 157-GHz, and 180-GHz InP HEMT traveling-wave amplifiers

1998 · B. Agarwal, A.E. Schmitz, et al. · IEEE Transactions on Microwave Theory and Techniques · 109

GaAs-compatible surface-micromachined RF MEMS switches

1999 · D. Hyman, A. Schmitz, et al. · Electronics Letters · 84

On-state and off-state breakdown in GaInAs/InP composite-channel HEMT's with variable GaInAs channel thickness

1999 · G. Meneghesso, A. Neviani, et al. · IEEE Transactions on Electron Devices · 80

Improved initial drop in operational lifetime of blue phosphorescent organic light emitting device fabricated under ultra high vacuum condition

2011 · H. Yamamoto, J. Brooks, et al. · Applied Physics Letters · 65

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Electron cyclotron resonance etching characteristics of GaN in SiCl4/Ar

1996 · L. Zhang, J. Ramer, et al. · Applied Physics Letters · 61

Plasma-etching processes for ULSI semiconductor circuits

1999 · M. Armacost, P. D. Hoh, et al. · IBM Journal of Research and Development · 58

Power Consumption and Temperature Increase in Large Area Active-Matrix OLED Displays

2008 · Min-Hao Michael Lu, M. Hack, et al. · Journal of Display Technology · 54

High-breakdown-voltage AlInAs/GaInAs junction-modulated HEMT's (JHEMT's) with regrown ohmic contacts by MOCVD

1993 · J.B. Shealy, M.M. Hashemi, et al. · IEEE Electron Device Letters · 31

High-efficiency GaAs-based pHEMT C-band power amplifier

1996 · J. J. Brown, J. A. Pusl, et al. · IEEE Microwave and Guided Wave Letters · 26

High temperature operation and stability of phosphorescent OLEDs

2004 · V.I. Adamovich, M.S. Weaver, et al. · Current Applied Physics · 25

Effects of channel quantization and temperature on off-state and on-state breakdown in composite channel and conventional InP-based HEMTs

2002 · G. Meneghesso, A. Mion, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 24

CH4/H2/Ar/Cl2 electron cyclotron resonance plasma etching of via holes for InP-based microwave devices

1994 · R. Khare, J. Brown, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 24

High performance, high yield millimeter-wave MMIC LNAs using InP HEMTs

2002 · Long Tran, R. Isobe, et al. · IEEE MTT-S International Microwave Symposium digest · 22

Manufacturability of 0.1- mu m millimeterwave low-noise InP HEMTs

2002 · L. Nguyen, M. Le, et al. · IEEE MTT-S International Microwave Symposium digest · 21

Optically powered optical interconnection system

1989 · Y. Liu, J.J. Brown, et al. · IEEE Photonics Technology Letters · 19

A 1-157 GHz InP HEMT traveling-wave amplifier

2002 · B. Agarwal, A.E. Schmitz, et al. · Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium · 18

In/sub 0.53/Ga/sub 0.47/As junction field-effect transistors as tunable feedback resistors for integrated receiver preamplifiers

1989 · J.J. Brown, D.C.W. Lo, et al. · IEEE Electron Device Letters · 16

High-efficiency L and S-band power amplifiers with high-breakdown GaAs-based pHEMTs

2002 · J.A. Pusl, R.D. Widman, et al. · IEEE MTT-S International Microwave Symposium digest · 14

Optically powered, integrated 'smart' pixels for optical interconnection networks

1991 · J.J. Brown, J.T. Gardner, et al. · IEEE Photonics Technology Letters · 14

InP-based mixed device (HEMT/HBT) technology onplanar substrate for high performance mixed-signal and optoelectronic circuits

1997 · K. Kızılog̅lu, M.W. Yung, et al. · Electronics Letters · 12

Study of the dependence of Ga/sub 0.47/In/sub 0.53/As/Al/sub x/ In/sub 1-x/As power HEMT breakdown voltage on Schottky layer design and device layout

1993 · J.J. Brown, A.S. Brown, et al. · IEEE Transactions on Electron Devices · 12

52.3: Display Properties of High‐efficiency Electrophosphorescent Diodes

2002 · Raymond C. Kwong, Matthew R. Nuggent, et al. · SID Symposium Digest of Technical Papers · 11

Advanced High-temperature superconducting components for microwave systems

1992 · E. Belohoubek, E. Denlinger, et al. · Journal of Superconductivity · 11

High-efficiency GaAs-based pHEMT power amplifier technology for 1-18 GHz

2002 · J.A. Pusl, J.J. Brown, et al. · IEEE MTT-S International Microwave Symposium digest · 10

Works count: 51

Citation count: 1,090

H-index: 17

I10-index: 27