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Marie Wintrebert‐Fouquet

Observed names: M Wintrebert-Fouquet, M. WINTREBERT-FOUQUET, M. Wintrebert-Forquet, M. Wintrebert-Fouquet, M. Wintrebert-fouquet, M. Wintrebert‐Fouquet, M. Wintreert-Fouquet, Marie Wintrebert-Fouquet, Marie Wintrebert-fouquet C, Wintrebert-Fouquet, M
OpenAlex ID: A5113576476
Nitrogen-rich indium nitride
2004 · K. S. A. Butcher, M. Wintrebert-Fouquet, et al. · Journal of Applied Physics · 69
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The nature of nitrogen related point defects in common forms of InN
2007 · K. S. A. Butcher, A. J. Fernandes, et al. · Journal of Applied Physics · 61
A luminescence study of porous diatoms
2005 · K.S.A. Butcher, J.M. Ferris, et al. · Materials Science and Engineering C · 54
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A Raman spectroscopy study of InN
2004 · M Kuball, J.W Pomeroy, et al. · Journal of Crystal Growth · 45
Stoichiometry effects and the Moss–Burstein effect for InN
2006 · K. S. A. Butcher, H. Hirshy, et al. · physica status solidi (a) · 39
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Absorption and photoluminescence features caused by defects in InN
2004 · Dimiter Alexandrov, K.Scott A. Butcher, et al. · Journal of Crystal Growth · 32
Non‐stoichiometry and non‐homogeneity in InN
2005 · K. Scott, A. Butcher, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 26
Apparent band-gap shift in InN films grown by remote-plasma-enhanced CVD
2006 · Patrick P.-T. Chen, K. Scott A. Butcher, et al. · Journal of Crystal Growth · 24
Detailed analysis of absorption data for indium nitride
2003 · K.S.A. Butcher, M. Wintrebert-Fouquet, et al. · Materials Science in Semiconductor Processing · 23
Nitrogen depletion of indium nitride films during Elastic Recoil Detection analysis
2005 · Santosh K. Shrestha, Heiko Timmers, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 16
Energy band gaps of InN containing oxygen and of the InxAl1−xN interface layer formed during InN film growth
2004 · Dimiter Alexandrov, K. Scott, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 16
Reliable ERD analysis of group-III nitrides despite severe nitrogen depletion
2004 · Santosh K. Shrestha, K.Scott A. Butcher, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 16
Modeling and experimental analysis of RPCVD based nitride film growth
2008 · C. Martin, K. S. A. Butcher, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 15
Resonant Raman spectroscopy on InN
2005 · M. Kuball, J. W. Pomeroy, et al. · physica status solidi (a) · 15
InN grown by remote plasma-enhanced chemical vapor deposition
2004 · M Wintrebert-Fouquet, K.Scott A Butcher, et al. · Journal of Crystal Growth · 15
Accurate stoichiometric analysis of polycrystalline indium nitride films with elastic recoil detection
2003 · Santosh K Shrestha, H Timmers, et al. · Current Applied Physics · 15
Piezoelectricity in indium nitride
2004 · I.L Guy, Z Zheng, et al. · Journal of Crystal Growth · 12
High sensitivity, high resolution X‐ray photoelectron analysis of InN
2003 · Marie Wintrebert‐Fouquet, K. Scott A. Butcher, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 10
Compositional and structural characterization of indium nitride using swift ions
2006 · Heiko Timmers, K. Scott A. Butcher, et al. · Journal of Crystal Growth · 9
Single-frequency DFB laser diodes at visible wavelengths grown with low temperature remote plasma chemical vapor deposition p-AlGaN
2023 · Ryan Anderson, Josh Brown, et al. · Gallium Nitride Materials and Devices · 6
Temperature investigation of dark current and its electrical noise in GaAs/AlGaAs multiquantum well photodiodes
1999 · M. Wintrebert-Fouquet, B. Orsal · Journal of Applied Physics · 6
Piezoelectric coefficient of InN films prepared by radio-frequency sputtering
2007 · M. Wintrebert-Fouquet, K.S.A. Butcher, et al. · Thin Solid Films · 5
Remote plasma chemical vapour deposition of group III-nitride tunnel junctions for LED applications
2019 · S. Barik, D. Liu, et al. · Light-Emitting Devices, Materials, and Applications · 4
Effects of crystallinity and chemical variation on apparent band-gap shift in polycrystalline indium nitride
2010 · P.P.-T. Chen, J.E. Downes, et al. · Thin Solid Films · 4
Switching time measurements of GaAs/AlAs and InGaAs/AlAs resonant tunnelling diodes
2002 · C.S.Y. Leung, M. Wintreert-Fouquet, et al. · Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD) · 4
Works count: 56
Citation count: 560
H-index: 15
I10-index: 18
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