Work

Absorption and photoluminescence features caused by defects in InN

Year: 2004

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/j.jcrysgro.2004.05.036

Authors: Dimiter Alexandrov, K.Scott A. Butcher, Marie Wintrebert-Fouquet

Institutions: Lakehead University, Macquarie University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1980883116

FWCI: 2.676

Cites: 26

Cited by: 32

Related to: 10