Author

Mieko Matsumura

Observed names: M MATSUMURA, M Matsumura, M. MATSUMURA, M. Matsumura, 松村三江子

Institution: Hitachi (Japan)

Observed institutions: Tokyo Institute of Technology, NEC (Japan), Kyushu University, Mie University, Texas Instruments (Japan), Imperial College London, Hitachi (Japan)

OpenAlex ID: A5113582499

High-mobility poly-Si thin-film transistors fabricated by a novel excimer laser crystallization method

1993 · K. Shimizu, O. Sugiura, et al. · IEEE Transactions on Electron Devices · 98

Proposed vertical-type amorphous-silicon field-effect transistors

1984 · Y. Uchida, Y. Nara, et al. · IEEE Electron Device Letters · 63

A proposed single grain-boundary thin-film transistor

2001 · Chang-Ho Oh, M. Matsumura · IEEE Electron Device Letters · 53

Kinetics investigation of a preferential (104) plane oriented LiCoO2 thin film prepared by RF magnetron sputtering

2007 · J XIE, N IMANISHI, et al. · Solid State Ionics · 43

Amorphous-silicon image sensor IC

1980 · M. Matsumura, H. Hayama, et al. · IEEE Electron Device Letters · 40

Amorphous-silicon integrated circuit

1980 · M. Matsumura, H. Hayama · Proceedings of the IEEE · 37

Low-temperature growth of InSb by vacuum MOCVD using TEln and SbH3

1988 · O. Sugiura, H. Kameda, et al. · Journal of Electronic Materials · 36

Preparation and Characterization of Reactively-Sputtered Amorphous Si: H Films

1980 · S. Iizima, H. Okushi, et al. · Japanese Journal of Applied Physics · 34

Submicrometre lift-off line with T-shaped cross-sectional form

1981 · M. Matsumura, K. Tsutsui, et al. · Electronics Letters · 29

Amorphous-silicon/silicon-nitride thin-film transistors fabricated by plasma-free (chemical vapor deposition) method

1990 · H. Kanoh, O. Sugiura, et al. · IEEE Electron Device Letters · 27

Ultra-large grain growth of Si films on glassy substrate

1995 · R. Ishihara, M. Matsumura · Electronics Letters · 25

Short-channel amorphous-silicon thin-film transistors

1996 · Chang-Dong Kim, M. Matsumura · IEEE Transactions on Electron Devices · 23

Effects of post-oxidation annealing on 3nm-thick low-temperature-grown gate oxide

1997 · Tomoyuki Sakoda, Mieko Matsumura, et al. · Applied Surface Science · 22

Extraction of the Capacitance of a Metal Oxide Semiconductor Tunnel Diode (MOSTD) Biased in Accumulation

1999 · Mieko Matsumura, Yutaka Hirose · Japanese Journal of Applied Physics · 20

New substances for atomic-layer deposition of silicon dioxide

1995 · S. Morishita, W. Gasser, et al. · Journal of Non-Crystalline Solids · 18

Negative-Capacitance Effect in Forward-Biased Metal Oxide Semiconductor Tunnel Diodes (MOSTD)

2000 · Mieko Matsumura, Yutaka Hirose · Japanese Journal of Applied Physics · 17

Novel Phase Modulator for ELA-Based Lateral Growth of Si

2005 · Y. Taniguchi, M. Matsumura, et al. · Journal of The Electrochemical Society · 16

Subthreshold properties of TFTs with laser-crystallized laterally grown polysilicon layers

2006 · M. Matsumura, M. Hatano, et al. · IEEE Electron Device Letters · 15

Application of Excimer-Laser Annealing to Amorphous, Poly-Crystal and Single-Crystal Silicon Thin-Film Transistors

1998 · M. Matsumura · physica status solidi (a) · 15

A New Study on the Degradation Mechanism in Low-Temperature p-Channel Polycrystalline Silicon TFTs Under Dynamic Stress

2006 · Y. Toyota, M. Matsumura, et al. · IEEE Transactions on Electron Devices · 14

a-Si:H TFTs using low-temperature CVD of Si 3 H 8

1989 · P.A. Breddels, H. Kanoh, et al. · Electronics Letters · 14

Short-channel a-Si thin-film MOS transistors

1989 · Y. Uchida, M. Matsumura · IEEE Transactions on Electron Devices · 14

Effects of interface properties in SiC MOSFETs on reliability

2015 · Y. Mori, D. Hisamoto, et al. · IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) · 13

Novel trench-etched double-diffused SiC MOS (TED MOS) for overcoming tradeoff between RonA and Qgd

2015 · Naoki Tega, Hiroyuki Yoshimoto, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 13

Two-component model for long-term prediction of threshold voltage shifts in SiC MOSFETs under negative bias stress

2015 · Mieko Matsumura, Keisuke Kobayashi, et al. · Japanese Journal of Applied Physics · 13

Works count: 117

Citation count: 936

H-index: 16

I10-index: 28