Amorphous-silicon/silicon-nitride thin-film transistors fabricated by plasma-free (chemical vapor deposition) method
Year: 1990
Type: article
Source: IEEE Electron Device Letters
DOI: 10.1109/55.55273
Authors: H. Kanoh, O. Sugiura, P.A. Breddels, M. Matsumura
Institutions: Tokyo Institute of Technology, Philips (Netherlands)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1987201623