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Osamu Sugiura

Observed names: O Sugiura, O. SUGIURA, O. Sugiura, Osamu SUGIURA, Osamu Sugiura Osamu Sugiura, SUGIURA, OSAMU
OpenAlex ID: A5111777192
High-mobility poly-Si thin-film transistors fabricated by a novel excimer laser crystallization method
1993 · K. Shimizu, O. Sugiura, et al. · IEEE Transactions on Electron Devices · 98
Atomic layer epitaxy of Si using atomic H
1993 · Shigeru Imai, Toshio Iizuka, et al. · Thin Solid Films · 58
On-Chip Bottom-Gate Polysilicon and Amorphous Silicon Thin-Film Transistors Using Excimer Laser Annealing
1990 · Kazuhiro Shimizu, Osamu Sugiura, et al. · Japanese Journal of Applied Physics · 54
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Drastic Enlargement of Grain Size of Excimer-Laser-Crystallized Polysilicon Films
1992 · Do-Hyun Choi, Kazuhiro Shimizu, et al. · Japanese Journal of Applied Physics · 53
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A Novel Atomic Layer Epitaxy Method of Silicon
1991 · Shigeru Imai, Satoru Takagi, et al. · Japanese Journal of Applied Physics · 43
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High-current-gain InGaAs/InP double-heterojunction bipolar transistors grown by metal organic vapor phase epitaxy
1988 · O. Sugiura, A.G. Dentai, et al. · IEEE Electron Device Letters · 42
High-Mobility Bottom-Gate Thin-Film Transistors with Laser-Crystallized and Hydrogen-Radical-Annealed Polysilicon Films
1991 · Kazuhiro Shimizu, Hideki Hosoya, et al. · Japanese Journal of Applied Physics · 38
Low-temperature growth of InSb by vacuum MOCVD using TEln and SbH3
1988 · O. Sugiura, H. Kameda, et al. · Journal of Electronic Materials · 36
Lateral Growth of Poly-Si Film by Excimer Laser and Its Thin Film Transistor Application
1994 · Do-Hyun Choi, Eiichi Sadayuki, et al. · Japanese Journal of Applied Physics · 34
Film Characteristics of Low-Temperature Plasma-Enhanced Chemical Vapor Deposition Silicon Dioxide Using Tetraisocyanatesilane and Oxygen
1998 · Irman Idris, Osamu Sugiura · Japanese Journal of Applied Physics · 28
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Chemical Vapor Deposition of Amorphous Silicon Using Tetrasilane
1993 · Hiroshi Kanoh, Osamu Sugiura Osamu Sugiura, et al. · Japanese Journal of Applied Physics · 28
Hot-Wall Chemical-Vapor-Deposition of Amorphous-Silicon and Its Application to Thin-Film Transistors
1991 · Byung-Chul Ahn, Kazuhiro Shimizu, et al. · Japanese Journal of Applied Physics · 28
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Amorphous-silicon/silicon-nitride thin-film transistors fabricated by plasma-free (chemical vapor deposition) method
1990 · H. Kanoh, O. Sugiura, et al. · IEEE Electron Device Letters · 27
Hydrogen-Radical Annealing of Chemical Vapor-Deposited Amorphous Silicon Films
1990 · Yasutaka Uchida, Hiroshi Kanoh, et al. · Japanese Journal of Applied Physics · 25
Low-Temperature Chemical Vapor Deposition of Silicon Nitride Using A New Source Gas (Hydrogen Azide)
1992 · Ryouichi Ishihara, Hiroshi Kanoh, et al. · Japanese Journal of Applied Physics · 22
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Cryogenic InSb detector for radiation measurements
2002 · Ikuo Kanno, Fumiki Yoshihara, et al. · Review of Scientific Instruments · 20
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Optimization of Chemical Vapor Deposition Conditions of Amorphous-Silicon Films for Thin-Film Transistor Application
1990 · Hiroshi Kanoh, Osamu Sugiura, et al. · Japanese Journal of Applied Physics · 20
Radiation measurements by a cryogenic pn junction InSb detector with operating temperatures up to 115 K
2003 · Ikuo Kanno, Fumiki Yoshihara, et al. · Review of Scientific Instruments · 19
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Electronic Structures of Si-Based Manmade Crystals
1993 · Satoshi Sugahara, Osamu Sugiura Osamu Sugiura, et al. · Japanese Journal of Applied Physics · 18
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Transient Temperature Profiles in Silicon Films during Pulsed Laser Annealing
1991 · Kazuhiro Shimizu, Shigeru Imai, et al. · Japanese Journal of Applied Physics · 18
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Chemical Vapour Deposition of Amorphous Silicon with Silanes for Thin Film Transistors –The Influence of the Amorphous Silicon Deposition Temperature–
1991 · Paul A. Breddels, Hiroshi Kanoh, et al. · Japanese Journal of Applied Physics · 18
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High-Performance Poly-Si Thin-Film Transistors with Excimer-Laser Annealed Silicon-Nitride Gate
1993 · Kazuhiro Shimizu, Kyoutarou Nakamura, et al. · Japanese Journal of Applied Physics · 17
InSb cryogenic radiation detectors
2006 · I. Kanno, S. Hishiki, et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 15
a-Si:H TFTs using low-temperature CVD of Si 3 H 8
1989 · P.A. Breddels, H. Kanoh, et al. · Electronics Letters · 14
Amorphous-Silicon Thin-Film Transistors Using Chemical Vapor Deposition of Disilane
1990 · Paul A. Breddels, Hiroshi Kanoh, et al. · Japanese Journal of Applied Physics · 13
Works count: 108
Citation count: 982
H-index: 18
I10-index: 28
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