Hot-Wall Chemical-Vapor-Deposition of Amorphous-Silicon and Its Application to Thin-Film Transistors
Year: 1991
Type: article
Abstract: Hot-wall chemical vapor deposition of amorphous-silicon has been investigated, aiming at a batch process for thin-film transistors (TFTs). High-performance TFTs (mobility=1.7 cm2/Vs, threshold voltage =9 V and subthreshold voltage swing =0.8 V/decade) have been successfully fabricated. Similar good TFT characteristics were obtained over a wide range of a-Si deposition conditions.
DOI: 10.1143/jjap.30.3695
Authors: Byung-Chul Ahn, Kazuhiro Shimizu, Tsutomu Satoh, Hiroshi Kanoh, Osamu Sugiura Osamu Sugiura, Masakiyo Matsumura Masakiyo Matsumura
Institution: Tokyo Institute of Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2024940553