Author

Masakiyo Matsumura

Observed names: MATSUMURA, MASAKIYO, Masakiyo MATSUMURA, Masakiyo Matsumura Masakiyo Matsumura

Observed institutions: Nihon University, Tokyo Institute of Technology, NEC (Japan), Teikyo University of Science, Hitachi (Japan)

OpenAlex ID: A5113520837

A Novel Phase-Modulated Excimer-Laser Crystallization Method of Silicon Thin Films

1998 · Chang-Ho Oh Chang-Ho Oh, Motohiro Ozawa Motohiro Ozawa, et al. · Japanese Journal of Applied Physics · 142

Theoretical Analysis of Amorphous-Silicon Field-Effect-Transistors

1983 · Satoru Kishida, Yasuo Naruke, et al. · Japanese Journal of Applied Physics · 88

Diagnostic Study of VHF Plasma and Deposition of Hydrogenated Amorphous Silicon Films

1990 · Shunri Oda, Jun'ichirou Noda, et al. · Japanese Journal of Applied Physics · 78

PDF

Excimer-Laser-Induced Lateral-Growth of Silicon Thin-Films

1998 · Kensuke Ishikawa Kensuke Ishikawa, Motohiro Ozawa Motohiro Ozawa, et al. · Japanese Journal of Applied Physics · 70

PDF

Chemical Vapor Deposition of Nickel Oxide Films from Bis-π-Cyclopentadienyl-Nickel

1997 · Wen-chang Yeh Wen-chang Yeh, Masakiyo Matsumura Masakiyo Matsumura · Japanese Journal of Applied Physics · 67

Atomic-layer chemical-vapor-deposition of silicon-nitride

1997 · Shunsuke Morishita, Satoshi Sugahara, et al. · Applied Surface Science · 66

Atomic layer epitaxy of Si using atomic H

1993 · Shigeru Imai, Toshio Iizuka, et al. · Thin Solid Films · 58

Quasi-monolayer deposition of silicon dioxide

1994 · Werner Gasser, Yasutaka Uchida, et al. · Thin Solid Films · 56

On-Chip Bottom-Gate Polysilicon and Amorphous Silicon Thin-Film Transistors Using Excimer Laser Annealing

1990 · Kazuhiro Shimizu, Osamu Sugiura, et al. · Japanese Journal of Applied Physics · 54

PDF

Drastic Enlargement of Grain Size of Excimer-Laser-Crystallized Polysilicon Films

1992 · Do-Hyun Choi, Kazuhiro Shimizu, et al. · Japanese Journal of Applied Physics · 53

PDF

Amorphous-silicon thin-film metal-oxide-semiconductor transistors

1980 · Hiroshi Hayama, Masakiyo Matsumura · Applied Physics Letters · 45

Excimer-Laser-Produced Single-Crystal Silicon Thin-Film Transistors

1997 · Ryoichi Ishihara Ryoichi Ishihara, Masakiyo Matsumura Masakiyo Matsumura · Japanese Journal of Applied Physics · 44

PDF

Effects of Light Pulse Duration on Excimer-Laser Crystallization Characteristics of Silicon Thin Films

1995 · Ryoichi Ishihara Ryoichi Ishihara, Wen-Chang Yeh Wen-Chang Yeh, et al. · Japanese Journal of Applied Physics · 44

A Novel Atomic Layer Epitaxy Method of Silicon

1991 · Shigeru Imai, Satoru Takagi, et al. · Japanese Journal of Applied Physics · 43

PDF

High-performance amorphous-silicon field-effect transistors

1980 · Masakiyo Matsumura, Yasuo Nara · Journal of Applied Physics · 43

High-Mobility Bottom-Gate Thin-Film Transistors with Laser-Crystallized and Hydrogen-Radical-Annealed Polysilicon Films

1991 · Kazuhiro Shimizu, Hideki Hosoya, et al. · Japanese Journal of Applied Physics · 38

Preparation of a-Si:H Films by VHF Plasma CVD

1988 · Shunri Oda, Jun'Ichirou Noda, et al. · MRS Proceedings · 36

Preparation and Characterization of Low-k Silica Film Incorporated with Methylene Groups

2001 · Satoshi Sugahara, Tomohiro Kadoya, et al. · Journal of The Electrochemical Society · 35

PDF

Atomic layer etching of germanium

1997 · Keiji Ikeda, Shigeru Imai, et al. · Applied Surface Science · 34

Lateral Growth of Poly-Si Film by Excimer Laser and Its Thin Film Transistor Application

1994 · Do-Hyun Choi, Eiichi Sadayuki, et al. · Japanese Journal of Applied Physics · 34

Two-Dimensionally Position-Controlled Excimer-Laser-Crystallization of Silicon Thin Films on Glassy Substrate

1999 · Motohiro Ozawa Motohiro Ozawa, Chang-Ho Oh Chang-Ho Oh, et al. · Japanese Journal of Applied Physics · 31

Amorphous-silicon/silicon-oxynitride field-effect transistors

1982 · Kouichirou Ishibashi, Masakiyo Matsumura · Applied Physics Letters · 29

Chemical Vapor Deposition of Amorphous Silicon Using Tetrasilane

1993 · Hiroshi Kanoh, Osamu Sugiura Osamu Sugiura, et al. · Japanese Journal of Applied Physics · 28

Hot-Wall Chemical-Vapor-Deposition of Amorphous-Silicon and Its Application to Thin-Film Transistors

1991 · Byung-Chul Ahn, Kazuhiro Shimizu, et al. · Japanese Journal of Applied Physics · 28

PDF

Gas-phase-reaction-controlled atomic-layer-epitaxy of silicon

1998 · Eiji Hasunuma, Satoshi Sugahara, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 27

Works count: 220

Citation count: 2,423

H-index: 26

I10-index: 69