Year: 1991
Type: article
Abstract: A new atomic layer epitaxy (ALE) method of silicon has been investigated. Substrate temperature T s is increased to more than a critical temperature, and decreased to less than another critical temperature alternatively, and trisilane gas is injected as source molecules only in a short interval within the low-T s phase. This method separates an adsorption phase of silicon hydrides with one-monolayer thickness from a desorption phase of hydrogen, resulting in the monolayer growth per cycle. ALE growth conditions were estimated from gas-source MBE characteristics, and ALE growth (with 0.8 monolayer/cycle) was demonstrated. The grown layer had good surface morphology and crystallinity.
DOI: 10.1143/jjap.30.3646
Authors: Shigeru Imai, Satoru Takagi, Osamu Sugiura Osamu Sugiura, Masakiyo Matsumura Masakiyo Matsumura
Institution: Tokyo Institute of Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W1965650720