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Ailing Cai

Observed names: A. Cai, A. L. Cai, A.L Cai, A.L. Cai
ORCID: 0009-0007-7996-9410
Observed ORCID: 0009-0007-7996-9410
OpenAlex ID: A5113585524
Enhanced photoconductivity of ZnO films Co-doped with nitrogen and tellurium
2005 · H. L. Porter, A. L. Cai, et al. · Applied Physics Letters · 69
Direct formation of self-assembled nanoporous aluminium oxide on SiO2and Si substrates
2002 · Ailing Cai, Haoyue Zhang, et al. · Nanotechnology · 49
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Growth of ZnO films on C-plane (0001) sapphire by pulsed electron deposition (PED)
2005 · H.L. Porter, C. Mion, et al. · Materials Science and Engineering B · 26
Gallium nitride surface quantum wells
2005 · J. F. Muth, X. Zhang, et al. · Applied Physics Letters · 21
Molecular beam epitaxy growth of GaN on C-terminated 6H–SiC (0001¯) surface
2000 · Z. P. Guan, A. L. Cai, et al. · Applied Physics Letters · 21
Optical Properties of II-IV-N2 Semiconductors
2004 · John Muth, Ailing Cai, et al. · MRS Proceedings · 17
Electron-beam-induced optical memory effects in GaN
2002 · Y. C. Chang, A. L. Cai, et al. · Applied Physics Letters · 14
Refractive indices of ZnSiN2 on r-plane sapphire
2005 · B. P. Cook, H. O. Everitt, et al. · Applied Physics Letters · 11
The Refractive Index and Other Properties of Doped ZnO films
2003 · A. L. Cai, J. F. Muth, et al. · MRS Proceedings · 9
Thermal removal of oxide and carbide from 6H–SiC surfaces before molecular beam epitaxial growth of GaN
2000 · Z.P Guan, A.L Cai, et al. · Applied Surface Science · 8
GaN grown on two-step cleaned C-terminated 6H–SiC by molecular-beam epitaxy
2001 · Z. P. Guan, A. L. Cai, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 5
Surface Recombination and Vacuum/GaN/AlGaN Surface Quantum Wells
2005 · Xiyao Zhang, Ian Patrick Wellenius, et al. · MRS Proceedings · 2
Band gap engineering of gallium nitride surface quantum wells
2005 · X. Zhang, A. Cai, et al. · IEEE Lasers and Electro-Optics Society Annual Meeting (LEOS)
Refractive Indices of A-plane GaN Thin Films on R-plane Sapphire
2005 · Ailing Cai, Ian Patrick Wellenius, et al. · MRS Proceedings
Wide Band Gap SemiconductorOptical Waveguide
2005 · Ailing Cai · NCSU Libraries Repository (North Carolina State University Libraries)
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Optical and structural studies of hydride vapor phase epitaxy grown GaN
2003 · Y. C. Chang, A. L. Cai, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
Structural, optical and electrical properties of the novel semiconductor alloy ZnOxTe(1-x)
2002 · H. L. Porter, C. Jin, et al. · MRS Proceedings
Effect of Growth Temperature and Annealing on ZnO
2002 · A. L. Cai, J. F. Muth, et al. · MRS Proceedings
The Growth and Characterization of GaN Thin Films on SiC Substrates
2000 · Ailing Cai · BearWorks (Missouri State University)
Works count: 19
Citation count: 252
H-index: 9
I10-index: 8
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