GaN grown on two-step cleaned C-terminated 6H–SiC by molecular-beam epitaxy
Year: 2001
Type: article
DOI: 10.1116/1.1329120
Authors: Z. P. Guan, A. L. Cai, H. Porter, J. Cabalu, J. Chen, S. Huang, R. E. Giedd
Institution: Missouri State University
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2000478766