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W. I. Wang

Resonant tunneling of holes in AlAs-GaAs-AlAs heterostructures
1985 · E. E. Mendez, W. I. Wang, et al. · Applied Physics Letters · 200
High mobility hole gas and valence-band offset in modulation-doped p-AlGaAs/GaAs heterojunctions
1984 · W. I. Wang, E. E. Mendez, et al. · Applied Physics Letters · 179
Resonant tunneling via X-point states in AlAs-GaAs-AlAs heterostructures
1987 · E. E. Mendez, W. I. Wang, et al. · Applied Physics Letters · 106
Valence band offset in AlAs/GaAs heterojunctions and the empirical relation for band alignment
1985 · W. I. Wang, Frank Stern · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 96
AlGaAs/GaAs(111) heterostructures grown by molecular beam epitaxy
1986 · L. Vina, W. I. Wang · Applied Physics Letters · 80
Mixing between heavy-hole and light-hole excitons in GaAs/ Alx Ga1−x As quantum wells in an electric field
1987 · R. T. Collins, L. Vina, et al. · Physical review. B, Condensed matter · 55
High mobility two-dimensional hole gas in an Al0.26Ga0.74As/GaAs heterojunction
1986 · W. I. Wang, E. E. Mendez, et al. · Journal of Applied Physics · 50
Electron velocity and negative differential mobility in AlGaAs/GaAs modulation-doped heterostructures
1987 · W. T. Masselink, N. Braslau, et al. · Applied Physics Letters · 48
High-purity GaAs grown by molecular-beam epitaxy
1986 · W. I. Wang, R. F. Marks, et al. · Journal of Applied Physics · 43
Novel crystal growth of AlGaAs/GaAs heterostructures on polar surfaces
1986 · W.I. Wang · Surface Science · 42
Temperature dependence of hole mobility in GaAs-Ga1−xAlxAs heterojunctions
1985 · E. E. Mendez, W. I. Wang · Applied Physics Letters · 37
Magnetotransport properties and subband structure of the two-dimensional hole gas in GaAs- Ga1−x Alx As heterostructures
1986 · Y. Iye, E. E. Mendez, et al. · Physical review. B, Condensed matter · 31
On the band offsets of AlGaAs/GaAs and beyond
1986 · W.I. Wang · Solid-State Electronics · 31
Electron velocity at high electric fields in AlGaAs/GaAs modulation-doped heterostructures
1988 · W.T. Masselink, N. Braslau, et al. · Solid-State Electronics · 25
Energy relaxation in p- and n-GaAs quantum wells: Confinement effects
1988 · M. Tatham, R.A. Taylor, et al. · Solid-State Electronics · 23
Oscillatory Landé factor of two-dimensional electrons under high magnetic fields
1993 · E. E. Mendez, J. Nocera, et al. · Physical review. B, Condensed matter · 18
Electronic Properties Of Quantum Wells In Perturbing Fields
1987 · R. T. Collins, L. Vina, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 17
On the long-range order in AlGaAs
1985 · W. I. Wang · Journal of Applied Physics · 14
Reproducible temperature measurement of GaAs substrates during molecular beam epitaxial growth
1986 · S. L. Wright, R. F. Marks, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 10
GaAs-GaAlAs graded-index separate confinement heterostructure laser diodes selectively grown by molecular beam epitaxy on SiO2-masked substrates
1987 · J. M. Hong, M. C. Wu, et al. · Applied Physics Letters · 7
Summary Abstract: Resonant tunneling of holes in quantum well heterostructures
1985 · W. I. Wang, E. E. Mendez, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 7
ENERGY RELAXATION IN p- AND n-GaAs QUANTUM WELLS: CONFINEMENT EFFECTS
1988 · M. Tatham, R.A. Taylor, et al. · Elsevier eBooks · 1
Summary Abstract: Tunneling in AlAs/GaAs/AlAs heterostructures under hydrostatic pressure
1987 · W. I. Wang, E. Calleja, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1
Two-dimensional electron gas emitter AlGaAs/GaAs heterojunction bipolar transistor with low offset voltage
1991 · Yamei WANG, Q Wang, et al.
Works count: 24
Citation count: 1,121
H-index: 17
I10-index: 19
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