GaAs-GaAlAs graded-index separate confinement heterostructure laser diodes selectively grown by molecular beam epitaxy on SiO2-masked substrates
Year: 1987
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.98844
Authors: J. M. Hong, M. C. Wu, S. Wang, W. I. Wang, L. L. Chang
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2058730844
