Product
Help
Pricing
About
Jobs
Log in
Get started
Author
Add to collection
Kiyoshi Yasutake
Observed names:
K YASUTAKE,
K Yasutake,
K. YASUTAKE,
K. Yasutake,
Kiyoshi YASUTAKE,
ヤスタケ, キヨシ
show all 6
Institutions:
Research Center for Precision Engineering,
The University of Osaka
Observed institutions:
Tokyo Electron (Japan),
Georgia Institute of Technology,
Japan Science and Technology Agency,
Canon Anelva (Japan),
Anelva Corporation (Japan),
Research Center for Precision Engineering,
The University of Osaka
show all 7
OpenAlex ID:
A5113726896
Plasma-enhanced chemical-vapor-deposited oxide for low surface recombination velocity and high effective lifetime in silicon
1993
·
Z. Chen
, S. K. Pang
, et al.
·
Journal of Applied Physics
·
79
Crack healing and fracture strength of silicon crystals
1986
·
K. Yasutake
, M. Iwata
, et al.
·
Journal of Materials Science
·
71
Atmospheric-pressure low-temperature plasma processes for thin film deposition
2013
·
Hiroaki Kakiuchi
, Hiromasa Ohmi
, et al.
·
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
·
66
Atmospheric pressure plasma chemical vapor deposition system for high-rate deposition of functional materials
2000
·
Y. Mori
, K. Yoshii
, et al.
·
Review of Scientific Instruments
·
56
Creation of perfect surfaces
2004
·
Yuzo Mori
, Kazuya Yamamura
, et al.
·
Journal of Crystal Growth
·
53
Characterization of intrinsic amorphous silicon layers for solar cells prepared at extremely high rates by atmospheric pressure plasma chemical vapor deposition
2005
·
H. Kakiuchi
, M. Matsumoto
, et al.
·
Journal of Non-Crystalline Solids
·
39
Molecular beam epitaxial growth of AlN single crystalline films on Si (111) using radio-frequency plasma assisted nitrogen radical source
1998
·
K. Yasutake
, A. Takeuchi
, et al.
·
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
·
39
Mechanical properties of heat-treated Czochralski-grown silicon crystals
1980
·
K. Yasutake
, M. Umeno
, et al.
·
Applied Physics Letters
·
38
Investigation of deposition characteristics and properties of high-rate deposited silicon nitride films prepared by atmospheric pressure plasma chemical vapor deposition
2004
·
H. Kakiuchi
, Y. Nakahama
, et al.
·
Thin Solid Films
·
37
Silicon film formation by chemical transport in atmospheric-pressure pure hydrogen plasma
2007
·
Hiromasa Ohmi
, Hiroaki Kakiuchi
, et al.
·
Journal of Applied Physics
·
36
Crystallization behaviour of amorphous Si1-xCx films prepared by r.f. sputtering
1991
·
Kumayasu Yoshii
, Yoshifumi Suzaki
, et al.
·
Thin Solid Films
·
36
Velocity of twinning partial dislocations in silicon
1987
·
Kiyoshi Yasutake
, Shinji Shimizu
, et al.
·
Journal of Applied Physics
·
35
Record low SiO2/Si interface state density for low temperature oxides prepared by direct plasma-enhanced chemical vapor deposition
1993
·
Z. Chen
, K. Yasutake
, et al.
·
Applied Physics Letters
·
32
Low-Temperature Growth of Epitaxial Si Films by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Porous Carbon Electrode
2006
·
Hiromasa Ohmi
, Hiroaki Kakiuchi
, et al.
·
Japanese Journal of Applied Physics
·
31
PDF
Oxygen precipitation and microdefects in Czochralski-grown silicon crystals
1984
·
K. Yasutake
, M. Umeno
, et al.
·
physica status solidi (a)
·
30
Mechanical Properties of Heat-treated CZ–Si Wafers from Brittle to Ductile Temperature Range
1982
·
Kiyoshi Yasutake
, Junichi Murakami
, et al.
·
Japanese Journal of Applied Physics
·
30
Fracture of GaAs Wafers
1988
·
Kiyoshi Yasutake
, Yoshito Konishi
, et al.
·
Japanese Journal of Applied Physics
·
28
PDF
Interface properties of SiOxNy layer on Si prepared by atmospheric-pressure plasma oxidation-nitridation
2013
·
Zeteng Zhuo
, Yuta Sannomiya
, et al.
·
Nanoscale Research Letters
·
27
PDF
Investigation of local charged defects within high-temperature annealed HfSiON∕SiO2 gate stacks by scanning capacitance spectroscopy
2007
·
Y. Naitou
, A. Ando
, et al.
·
Journal of Applied Physics
·
27
Self-limiting oxidation of SiGe alloy on silicon-on-insulator wafers
2006
·
Takayoshi Shimura
, Michihiro Shimizu
, et al.
·
Applied Physics Letters
·
25
PDF
Modeling and characterization of interface state parameters and surface recombination velocity at plasma enhanced chemical vapor deposited SiO2–Si interface
1994
·
K. Yasutake
, Z. Chen
, et al.
·
Journal of Applied Physics
·
25
High-rate HMDSO-based coatings in open air using atmospheric-pressure plasma jet
2012
·
H. Kakiuchi
, K. Higashida
, et al.
·
Journal of Non-Crystalline Solids
·
24
Microcrystalline Si films grown at low temperatures (90–220 °C) with high rates in atmospheric-pressure VHF plasma
2009
·
Hiroaki Kakiuchi
, Hiromasa Ohmi
, et al.
·
Journal of Applied Physics
·
24
High-rate growth of epitaxial silicon at low temperatures (530–690 °C) by atmospheric pressure plasma chemical vapor deposition
2003
·
Y. Mori
, K. Yoshii
, et al.
·
Thin Solid Films
·
24
Analysis of the effective stresses acting on twinning partial dislocations in silicon
1987
·
Kiyoshi Yasutake
, Shinji Shimizu
, et al.
·
Journal of Applied Physics
·
24
Show more works
View as search
Works count:
226
Citation count:
1,819
H-index:
24
I10-index:
62
Year
Topic
Type
