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Victor Liang

K-band low-noise amplifiers using 0.18 /spl mu/m CMOS technology
2004 · Kyung-Wan Yu, Yin-Lung Lu, et al. · IEEE Microwave and Wireless Components Letters · 92
RF passive devices on Si with excellent performance close to ideal devices designed by electro-magnetic simulation
2004 · A. Chin, K.T. Chan, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 37
psub guard ring design and modeling for the purpose of substrate noise isolation in the SOC era
2005 · Tsun-Lai Hsu, Yu-Chia Chen, et al. · IEEE Electron Device Letters · 29
A new failure mechanism by corrosion of tungsten in a tungsten plug process
1999 · S. Bothra, H. Sur, et al. · Microelectronics Reliability · 22
Trench Etches in Silicon with Controllable Sidewall Angles
1988 · Robert N. Carlile, Victor C. Liang, et al. · Journal of The Electrochemical Society · 22
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The minimum noise figure and mechanism as scaling RF MOSFETs from 0.18 to 0.13 μm technology nodes
2003 · C.H. Huang, K.T. Chan, et al. · Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium · 19
Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistors
2005 · Sheng-Yi Huang, Kun-Ming Chen, et al. · IEEE Transactions on Device and Materials Reliability · 17
Low RF loss and noise of transmission lines on Si substrates using an improved ion implantation process
2003 · K.T. Chan, A. Chin, et al. · IEEE MTT-S International Microwave Symposium digest · 17
On the RF Extrinsic Resistance Extraction for Partially-Depleted SOI MOSFETs
2007 · Sheng-Chun Wang, Pin Su, et al. · IEEE Microwave and Wireless Components Letters · 14
24 GHz low-noise amplifier in 0.18 µm CMOS technology
2003 · K.-W. Yu, Y.-L. Lu, et al. · Electronics Letters · 13
Linearity and Power Characteristics of SiGe HBTs at High Temperatures for RF Applications
2005 · K.-M. Chen, A.-S. Peng, et al. · IEEE Transactions on Electron Devices · 12
Passive Voltage Contrast Technique for Rapid In-Line Characterization and Failure Isolation During Development of Deep-Submicron ASIC CMOS Technology
1998 · Victor Liang, Harlan Sur, et al. · Proceedings - International Symposium for Testing and Failure Analysis · 12
New RC-Imbalance Failure Mechanism of Well Charging Damage and The Implemented Rule
2022 · Yu-Lin Chu, Hsi-Yu Kuo, et al. · IEEE International Reliability Physics Symposium proceedings · 11
A new failure mechanism by corrosion of tungsten in a tungsten plug process
1998 · S. Bothra, H. Sur, et al. · IEEE International Reliability Physics Symposium proceedings · 11
Protection Schemes for Plasma Induced Damage from Well-Side Antennas
2023 · Hsi-Yu Kuo, Yu-Lin Chu, et al. · IEEE International Reliability Physics Symposium proceedings · 7
Impact of Hot Carrier Stress on RF Power Characteristics of MOSFETs
2005 · Sheng-Yi Huang, Kun-Ming Chen, et al. · IEEE MTT-S International Microwave Symposium digest · 6
Temperature Dependence of High Frequency Noise Behaviors for RF MOSFETs
2008 · Sheng-Chun Wang, Pin Su, et al. · IEEE Microwave and Wireless Components Letters · 5
Thermal noise performance in recent CMOS technologies
2008 · Chih-Hung Chen, Bigchoug Hung, et al. · IEEE International Conference on Solid-State and Integrated Circuit Technology · 4
Design for Integration of RF Power Transistors in 0.13 μm Advanced CMOS Technology
2007 · Sheng-Yi Huang, Kun-Ming Chen, et al. · IEEE MTT-S International Microwave Symposium digest · 4
A 26 GHz low-noise amplifier in 0.18μm CMOS technology
2004 · Kyung-Wan Yu, Yin-Lung Lu, et al. · IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO) · 3
Corrosion of tungsten due to plasma charging in a metal plasma etcher
2002 · S. Bothra, H. Sur, et al. · International Symposium on Plasma Process-Induced Damage · 3
Novel Pseudo-Drain (PD) RF power cell in 0.13 um CMOS technology
2008 · Sheng-Yi Huang, Cheng-Chou Hung, et al. · Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium · 2
Radio-Frequency Silicon-on-Insulator Modeling Considering the Neutral-Body Effect
2008 · Sheng-Chun Wang, Pin Su, et al. · Japanese Journal of Applied Physics · 2
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Effects of Hot Carrier Stress and Oxide Breakdown on RF Characteristics of MOSFETs
2006 · Kun-Ming Chen, Dao-Yen Yang, et al. · Asia-Pacific Microwave Conference (APMC) · 2
RF Small-Signal and Noise Modeling for SOI Dynamic Threshold Voltage MOSFETs
2008 · S. C. Wang, P. Su, et al. · International Conference on Solid State Devices and Materials (SSDM) · 1
Works count: 33
Citation count: 369
H-index: 12
I10-index: 14
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