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Hosadurga k Shobha
Observed names:
H. K. Shobha,
H. Shobha,
H.K. Shobha,
Hosadurga Shobha,
S. Hosadurga
Institution:
IBM Research - Albany
Observed institutions:
IBM (United States),
IBM Research - Almaden,
IBM Research - Thomas J. Watson Research Center,
IBM Research - Albany
OpenAlex ID:
A5113796594
Full Bottom Dielectric Isolation to Enable Stacked Nanosheet Transistor for Low Power and High Performance Applications
2019
·
J. Zhang
, J. Frougier
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
109
Future on-chip interconnect metallization and electromigration
2018
·
C.-K. Hu
, J. Kelly
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
73
Experimental study of nanoscale Co damascene BEOL interconnect structures
2016
·
J. Kelly
, J. H.-C. Chen
, et al.
·
IEEE International Interconnect Technology Conference (IITC)
·
63
Fifteen Nanometer Resolved Patterns in Selective Area Atomic Layer Deposition—Defectivity Reduction by Monolayer Design
2018
·
Rudy Wojtecki
, Magi Mettry
, et al.
·
ACS Applied Materials & Interfaces
·
52
Electromigration comparison of selective CVD cobalt capping with PVD Ta(N) and CVD cobalt liners on 22nm-groundrule dual-damascene Cu interconnects
2013
·
A. H. Simon
, T. Bolom
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
42
BEOL process integration for the 7 nm technology node
2016
·
T. Standaert
, G. Beique
, et al.
·
IEEE International Interconnect Technology Conference (IITC)
·
36
Comparison of key fine-line BEOL metallization schemes for beyond 7 nm node
2017
·
T. Nogami
, X. Zhang
, et al.
·
Symposium on VLSI Technology
·
32
Mechanisms of Electromigration Damage in Cu Interconnects
2018
·
C.-K. Hu
, L. Gignac
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
30
Backside Power Distribution for Nanosheet Technologies Beyond 2nm
2024
·
Ruilong Xie
, Wonhyuk Hong
, et al.
·
IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
·
26
Cobalt/copper composite interconnects for line resistance reduction in both fine and wide lines
2017
·
T. Nogami
, R. Patlolla
, et al.
·
IEEE International Interconnect Technology Conference (IITC)
·
26
Annealing and Impurity Effects in Co Thin Films for MOL Contact and BEOL Metallization
2018
·
J. Kelly
, V. Kamineni
, et al.
·
Journal of The Electrochemical Society
·
25
PDF
Fully aligned via integration for extendibility of interconnects to beyond the 7 nm node
2017
·
Benjamin D. Briggs
, C. B. Peethala
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
22
In Situ Co/SiC(N,H) Capping Layers for Cu/Low- k Interconnects
2012
·
C.-C. Yang
, B. Li
, et al.
·
IEEE Electron Device Letters
·
20
Advanced single precursor based pSiCOH k = 2.4 for ULSI interconnects
2017
·
Deepika Priyadarshini
, Son V. Nguyen
, et al.
·
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
·
19
Through-Cobalt Self Forming Barrier (tCoSFB) for Cu/ULK BEOL: A novel concept for advanced technology nodes
2015
·
Takeshi Nogami
, Benjamin D Briggs
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
19
CMOS compatible MIM decoupling capacitor with reliable sub-nm EOT high-k stacks for the 7 nm node and beyond
2016
·
T. Ando
, E. Cartier
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
18
CVD-Co/Cu(Mn) integration and reliability for 10 nm node
2013
·
T. Nogami
, M. He
, et al.
·
IEEE International Interconnect Technology Conference (IITC)
·
18
High reliability 32 nm Cu/ULK BEOL based on PVD CuMn seed, and its extendibility
2010
·
T. Nogami
, T. Bolom
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
18
Synergistic combinations of dielectrics and metallization process technology to achieve 22nm interconnect performance targets
2011
·
G.A. Antonelli
, G. Jiang
, et al.
·
Microelectronic Engineering
·
17
Advanced BEOL Interconnects
2020
·
Takeshi Nogami
, Oleg Gluschenkov
, et al.
·
IEEE International Interconnect Technology Conference (IITC)
·
15
Reliable airgap BEOL technology in advanced 48 nm pitch copper/ULK interconnects for substantial power and performance benefits
2017
·
C. Penny
, S. Gates
, et al.
·
IEEE International Interconnect Technology Conference (IITC)
·
15
Advanced metal and dielectric barrier cap films for Cu low k interconnects
2014
·
Deepika Priyadarshini
, S. Nguyen
, et al.
·
IEEE International Interconnect Technology Conference (IITC)
·
14
Impact of Liner Metals on Copper Resistivity at Beyond 7nm Dimensions
2018
·
H. Huang
, N. Lanzillo
, et al.
·
IEEE International Interconnect Technology Conference (IITC)
·
13
Effective Cu surface pre-treatment for high-reliable 22nm-node Cu dual damascene interconnects with high plasma resistant ultra low-k dielectric (k=2.2)
2011
·
F. Ito
, H. Shobha
, et al.
·
Microelectronic Engineering
·
13
Electromigration and Line R of Graphene Capped Cu Dual Damascene Interconnect
2021
·
T. Nogami
, S. Nguyen
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
12
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Works count:
94
Citation count:
978
H-index:
18
I10-index:
32
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