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Masahiko Hata

Thin Body III–V-Semiconductor-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding
2009 · Masafumi Yokoyama, Tetsuji Yasuda, et al. · Applied Physics Express · 82
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Strain-induced enhancement of plasma dispersion effect and free-carrier absorption in SiGe optical modulators
2014 · Younghyun Kim, Mitsuru Takenaka, et al. · Scientific Reports · 73
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Sub-10-nm Extremely Thin Body InGaAs-on-Insulator MOSFETs on Si Wafers With Ultrathin $\hbox{Al}_{2}\hbox{O}_{3}$ Buried Oxide Layers
2011 · Masafumi Yokoyama, Ryo Iida, et al. · IEEE Electron Device Letters · 67
High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and $V_{\rm th}$ Tunability
2014 · Sang-Hyeon Kim, Masafumi Yokoyama, et al. · IEEE Transactions on Electron Devices · 65
III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interface
2010 · Masafumi Yokoyama, Tetsuji Yasuda, et al. · Applied Physics Letters · 65
Self-Aligned Metal Source/Drain InxGa1-xAs n-Metal–Oxide–Semiconductor Field-Effect Transistors Using Ni–InGaAs Alloy
2011 · SangHyeon Kim, Masafumi Yokoyama, et al. · Applied Physics Express · 64
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Formation of III–V-on-insulator structures on Si by direct wafer bonding
2013 · Masafumi Yokoyama, Ryo Iida, et al. · Semiconductor Science and Technology · 53
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High Electron Mobility Metal–Insulator–Semiconductor Field-Effect Transistors Fabricated on (111)-Oriented InGaAs Channels
2009 · Hiroyuki Ishii, Noriyuki Miyata, et al. · Applied Physics Express · 53
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High Ion/Ioff and low subthreshold slope planar-type InGaAs tunnel field effect transistors with Zn-diffused source junctions
2015 · Munetaka Noguchi, SangHyeon Kim, et al. · Journal of Applied Physics · 52
Reduction in interface state density of Al2O3/InGaAs metal-oxide-semiconductor interfaces by InGaAs surface nitridation
2012 · Takuya Hoshii, Sunghoon Lee, et al. · Journal of Applied Physics · 52
Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties
2012 · Rena Suzuki, Noriyuki Taoka, et al. · Journal of Applied Physics · 47
Sub-60-nm Extremely Thin Body ${\rm In}_{x}{\rm Ga}_{1-x}{\rm As}$-On-Insulator MOSFETs on Si With Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering and Its Scalability
2013 · Sanghyeon Kim, Masafumi Yokoyama, et al. · IEEE Transactions on Electron Devices · 46
High-Performance InAs-On-Insulator n-MOSFETs With Ni-InGaAs S/D Realized by Contact Resistance Reduction Technology
2013 · SangHyeon Kim, Masafumi Yokoyama, et al. · IEEE Transactions on Electron Devices · 43
Low-driving-current InGaAsP photonic-wire optical switches using III-V CMOS photonics platform
2012 · Yuki Ikku, Masafumi Yokoyama, et al. · Optics Express · 41
III–V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding
2012 · Masafumi Yokoyama, Sanghyeon Kim, et al. · Applied Physics Express · 34
Experimental Study on Electron Mobility in In x Ga 1-x As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors With In Content Modulation and MOS Interface Buffer Engineering
2013 · SangHyeon Kim, Masafumi Yokoyama, et al. · IEEE Transactions on Nanotechnology · 32
High Ion/Ioff and low subthreshold slope planar-type InGaAs tunnel FETs with Zn-diffused source junctions
2013 · Munetaka Noguchi, SangHyeon Kim, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 31
Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors
2013 · Noriyuki Taoka, Masafumi Yokoyama, et al. · Applied Physics Letters · 30
Strained In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with epitaxial based biaxial strain
2012 · SangHyeon Kim, Masafumi Yokoyama, et al. · Applied Physics Letters · 29
High Performance Extremely Thin Body InGaAs-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates with Ni–InGaAs Metal Source/Drain
2011 · SangHyeon Kim, Masafumi Yokoyama, et al. · Applied Physics Express · 28
Enhancement mechanism of terahertz radiation from coherent longitudinal optical phonons in undoped GaAs/n-type GaAs epitaxial structures
2013 · Shuichi Tsuruta, Hideo Takeuchi, et al. · Journal of Applied Physics · 27
Ultrathin layer transfer technology for post-Si semiconductors
2013 · Tatsuro Maeda, Hiroyuki Ishii, et al. · Microelectronic Engineering · 27
Electron Mobility Enhancement of Extremely Thin Body In$_{0.7}$Ga$_{0.3}$As-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates by Metal–Oxide–Semiconductor Interface Buffer Layers
2011 · SangHyeon Kim, Masafumi Yokoyama, et al. · Applied Physics Express · 27
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Wafer-scale layer transfer of GaAs and Ge onto Si wafers using patterned epitaxial lift-off
2015 · Eiko Mieda, Tatsuro Maeda, et al. · Japanese Journal of Applied Physics · 25
Impact of Fermi Level Pinning Due to Interface Traps Inside the Conduction Band on the Inversion-Layer Mobility in $\hbox{In}_{x}\hbox{Ga}_{1 - x}\hbox{As}$ Metal–Oxide–Semiconductor Field Effect Transistors
2013 · Noriyuki Taoka, Masafumi Yokoyama, et al. · IEEE Transactions on Device and Materials Reliability · 25
Works count: 89
Citation count: 1,509
H-index: 25
I10-index: 38
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