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R. Scholz
Observed names:
R Scholz,
R. F. Scholz,
R. SCHOLZ,
R.F Scholz,
R.F. Scholz,
Rene F. Scholz,
Rene Scholz,
René Scholz,
Scholz, Rene
show all 9
Institution:
Leibniz Institute for High Performance Microelectronics
Observed institutions:
Max Planck Society,
Max Planck Institute of Microstructure Physics,
Osipyan Institute of Solid State Physics RAS,
Joint Research Centre,
Academy of Sciences of the Soviet Union,
Martin Luther University Halle-Wittenberg,
Leibniz Institute for High Performance Microelectronics
show all 7
OpenAlex ID:
A5113855988
Size-controlled highly luminescent silicon nanocrystals: A SiO/SiO2 superlattice approach
2002
·
M. Zacharias
, J. Heitmann
, et al.
·
Applied Physics Letters
·
793
Enhanced surface-excitonic emission in ZnO/Al2O3 core–shell nanowires
2008
·
J-P Richters
, T Voss
, et al.
·
Nanotechnology
·
177
PDF
Si rings, Si clusters, and Si nanocrystals—different states of ultrathin SiOx layers
2002
·
L. X. Yi
, J. Heitmann
, et al.
·
Applied Physics Letters
·
174
Multilevel charge storage in silicon nanocrystal multilayers
2005
·
T. Z. Lu
, M. Alexe
, et al.
·
Applied Physics Letters
·
143
Novel collector design for high-speed SiGe:C HBTs
2003
·
B. Heinemann
, H. Rucker
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
110
Analysis of Silicon Nanowires Grown by Combining SiO Evaporation with the VLS Mechanism
2004
·
F. M. Kolb
, H. Hofmeister
, et al.
·
Journal of The Electrochemical Society
·
102
Carbon-induced undersaturation of silicon self-interstitials
1998
·
R. Scholz
, U. Gösele
, et al.
·
Applied Physics Letters
·
94
Optical gain in monodispersed silicon nanocrystals
2004
·
M. Cazzanelli
, D. Navarro-Urriós
, et al.
·
Journal of Applied Physics
·
84
The contribution of vacancies to carbon out-diffusion in silicon
1999
·
R. F. Scholz
, P. Werner
, et al.
·
Applied Physics Letters
·
75
Si nanocrystal based memories: Effect of the nanocrystal density
2006
·
T. Z. Lu
, M. Alexe
, et al.
·
Journal of Applied Physics
·
67
HREM investigation of latent tracks in GeS and mica induced by high energy ions
1998
·
J Vetter
, R Scholz
, et al.
·
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms
·
64
SiGe:C BiCMOS technology with 3.6 ps gate delay
2004
·
H. Rucker
, B. Heinemann
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
58
BEOL embedded RF-MEMS switch for mm-wave applications
2009
·
M. Kaynak
, K. E. Ehwald
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
50
A complementary BiCMOS technology with high speed npn and pnp SiGe:C HBTs
2004
·
B. Heinemann
, R. Barth
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
50
A flexible, low-cost, high performance SiGe:C BiCMOS process with a one-mask HBT module
2003
·
D. Knoll
, K.E. Ehwald
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
43
Investigation of latent tracks from heavy ions in GeS crystals by high resolution TEM
1994
·
J. Vetter
, R. Scholz
, et al.
·
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms
·
42
Diffusion Engineering by Carbon in Silicon
2000
·
Ulrich Goesele
, Pierre Laveant
, et al.
·
MRS Proceedings
·
38
Experimental and computer simulation studies of diffusion mechanisms on the arsenic sublattice of gallium arsenide
1998
·
M. Schultz
, U. Egger
, et al.
·
Journal of Applied Physics
·
38
Size controlled nc-Si synthesis by SiO/SiO2 superlattices
2002
·
J. Heitmann
, R. Scholz
, et al.
·
Journal of Non-Crystalline Solids
·
36
Development of a Multi-project Fan-Out Wafer Level Packaging Platform
2017
·
T. Braun
, S. Raatz
, et al.
·
IEEE Electronic Components and Technology Conference (ECTC)
·
35
Technology modules from micro‐ and nano‐electronics for the life sciences
2015
·
M. Birkholz
, A. Mai
, et al.
·
Wiley Interdisciplinary Reviews Nanomedicine and Nanobiotechnology
·
32
BiCMOS embedded RF-MEMS switch for above 90 GHz applications using backside integration technique
2010
·
M. Kaynak
, M. Wietstruck
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
32
Size-Controlled Si Nanocrystals for Photonic and Electronic Applications
2003
·
M. Zacharias
, L.X. Yi
, et al.
·
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
·
32
Dissociation of screw dislocations in (001) low-angle twist boundaries: A source of the 30 o partial dislocations in silicon
1999
·
A.YU. Belov
, R. Scholz
, et al.
·
Philosophical Magazine Letters
·
30
Properties of Vacancies and Divacancies in F. C. C. Metals
1979
·
W. Schüle
, R. Scholz
·
physica status solidi (b)
·
25
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Works count:
100
Citation count:
2,928
H-index:
25
I10-index:
47
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