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Alain Gagnaire

Deposition of SiO2 and TiO2 thin films by plasma enhanced chemical vapor deposition for antireflection coating
1997 · C. Martinet, V. Paillard, et al. · Journal of Non-Crystalline Solids · 176
The effects of polarization of the incident light-modeling and analysis of a SPR multimode optical fiber sensor
2000 · Wen Bin Lin, Nicole Jaffrezic-Renault, et al. · Sensors and Actuators A Physical · 132
Ellipsometric study of silicon nanocrystal optical constants
2003 · D. Amans, S. Callard, et al. · Journal of Applied Physics · 108
Organic thin film transistors with HfO2 high-k gate dielectric grown by anodic oxidation or deposited by sol–gel
2006 · J. Tardy, M. Erouel, et al. · Microelectronics Reliability · 75
Densification and aging of ZrO2 films prepared by sol–gel
2001 · R. Brenier, A. Gagnaire · Thin Solid Films · 69
Physical properties and photocatalytic efficiencies of TiO2 films prepared by PECVD and sol?gel methods
2004 · Chantal Guillard, Delphine Debayle, et al. · Materials Research Bulletin · 62
Fabrication and characterization of graded refractive index silicon oxynitride thin films
1997 · S. Callard, A. Gagnaire, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 46
An Ellipsometric Study of the Electrochemical Surface Modifications of n ‐ InP
1985 · Alain Gagnaire, Jacques Joseph, et al. · Journal of The Electrochemical Society · 39
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Physicochemical characterization of covalently bonded alkyl monolayers on silica surfaces
1990 · Yolanda Duvault, Alain Gagnaire, et al. · Thin Solid Films · 38
Ellipsometric study of anodic oxide growth: Application to the titanium oxide systems
1983 · J Joseph, A Gagnaire · Thin Solid Films · 37
Controlled spontaneous emission of a tri(8-hydroxyquinoline) aluminum layer in a microcavity
1999 · B. Masenelli, A. Gagnaire, et al. · Journal of Applied Physics · 30
Characterization of graded refractive index silicon oxynitride thin films by spectroscopic ellipsometry
1998 · S. Callard, A. Gagnaire, et al. · Thin Solid Films · 26
Fabrication and characterization of organic semiconductor-based microcavities
2000 · B. Masenelli, S. Callard, et al. · Thin Solid Films · 25
Optical properties of native oxides on InP
1988 · Y. Robach, A. Gagnaire, et al. · Thin Solid Films · 21
Growth and structure of rapid thermal silicon oxides and nitroxides studied by spectroellipsometry and Auger electron spectroscopy
1994 · N. Gonon, A. Gagnaire, et al. · Journal of Applied Physics · 17
Spectral and spatial narrowing of the emission of silicon nanocrystals in a microcavity
2004 · D. Amans, S. Callard, et al. · Journal of Applied Physics · 16
Spectroellipsometric Study of the Electrochemical Modification of InP
1987 · A. Gagnaire, J. Joseph, et al. · Journal of The Electrochemical Society · 13
New method for in situ control of Bragg reflector fabrication
1996 · S. Callard, A. Gagnaire, et al. · Applied Physics Letters · 11
Optical properties of a microcavity containing silicon nanocrystals
2003 · D. Amans, S. Callard, et al. · Materials Science and Engineering B · 10
Thin-film antimony trisulphide photoelectrodes
1982 · J.S. Curran, R. Philippe, et al. · Chemical Physics Letters · 9
Adapted wavelength methods for in situ ellipsometry
1998 · S. Callard, A. Gagnaire, et al. · Thin Solid Films · 6
InP-based micromechanical tunable and selective photodetector for WDM systems
1997 · Christian Seassal, Jean Louis Leclercq, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 6
In Situ Photoluminescence Control during Fabrication of SiO2/InP Structures
1997 · M. F. Lambrinos, M. P. Besland, et al. · Journal of The Electrochemical Society · 5
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Grafting of oxidized silicon nitride insulator for the preparation of ion-sensitive field effect transistor monolayer membranes
1992 · H. Perrot, N. Jaffrezic-Renault, et al. · Thin Solid Films · 5
Détermination des épaisseurs de films très minces de SiO2 sur silicium par microscopie électronique en transmission, ellipsométrie spectroscopique et spectroscopie de photoélectrons
1993 · R. Saoudi, G. Hollinger, et al. · Journal de Physique III · 4
Works count: 49
Citation count: 1,012
H-index: 16
I10-index: 19
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